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MPC8313VRGDFB 数据表(PDF) 14 Page - Freescale Semiconductor, Inc

部件名 MPC8313VRGDFB
功能描述  PowerQUICC??II Pro Processor Hardware Specifications
PDF  100 Pages
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制造商  FREESCALE [Freescale Semiconductor, Inc]
网页  http://www.freescale.com
标志 FREESCALE - Freescale Semiconductor, Inc

MPC8313VRGDFB 数据表(HTML) 14 Page - Freescale Semiconductor, Inc

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MPC8313E PowerQUICCII Pro Processor Hardware Specifications, Rev. 2.1
14
Freescale Semiconductor
DDR and DDR2 SDRAM
Table 11 provides the PLL lock times.
6
DDR and DDR2 SDRAM
This section describes the DC and AC electrical specifications for the DDR SDRAM interface. Note that
DDR SDRAM is GVDD(typ) = 2.5 V and DDR2 SDRAM is GVDD(typ) = 1.8 V.
6.1
DDR and DDR2 SDRAM DC Electrical Characteristics
Table 12 provides the recommended operating conditions for the DDR2 SDRAM component(s) when
GVDD(typ) = 1.8 V.
Time for the device to turn on POR configuration signal drivers with respect to
the negation of HRESET
1—
tPCI_SYNC_IN
1, 3
Notes:
1. tPCI_SYNC_IN is the clock period of the input clock applied to PCI_SYNC_IN. When the device is In PCI host mode the primary
clock is applied to the SYS_CLK_IN input, and PCI_SYNC_IN period depends on the value of CFG_CLKIN_DIV.
2. tSYS_CLK_IN is the clock period of the input clock applied to SYS_CLK_IN. It is only valid when the device is in PCI host mode.
3. POR configuration signals consists of CFG_RESET_SOURCE[0:2] and CFG_CLKIN_DIV.
Table 11. PLL Lock Times
Parameter/Condition
Min
Max
Unit
Notes
PLL lock times
100
μs—
Table 12. DDR2 SDRAM DC Electrical Characteristics for GVDD(typ) = 1.8 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
I/O supply voltage
GVDD
1.7
1.9
V
1
I/O reference voltage
MVREF
0.49
× GVDD
0.51
× GVDD
V2
I/O termination voltage
VTT
MVREF –0.04
MVREF + 0.04
V
3
Input high voltage
VIH
MVREF +0.125
GVDD +0.3
V
Input low voltage
VIL
–0.3
MVREF – 0.125
V
Output leakage current
IOZ
–9.9
9.9
μA4
Output high current (VOUT = 1.420 V)
IOH
–13.4
mA
Output low current (VOUT = 0.280 V)
IOL
13.4
mA
Notes:
1. GVDD is expected to be within 50 mV of the DRAM GVDD at all times.
2. MVREF is expected to be equal to 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver. Peak-to-peak
noise on MVREF may not exceed ±2% of the DC value.
3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
equal to MVREF. This rail should track variations in the DC level of MVREF.
4. Output leakage is measured with all outputs disabled, 0 V
VOUT GVDD.
Table 10. RESET Initialization Timing Specifications (continued)
Parameter/Condition
Min
Max
Unit
Notes



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