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CMS4A16LAH 数据表(PDF) 5 Page - FIDELIX |
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CMS4A16LAH 数据表(HTML) 5 Page - FIDELIX |
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5 / 46 page ![]() Rev. 0.4, Nov. ‘06 CMS4A16LAx–75xx 5 Pin Description Input/Output Mask:L(U)DQM is sampled HIGH and is an input mask signal for write accesses and an output disable signal for read accesses. Input data is masked during a WRITE cycle. The output buffers are placed in a High-Z state (two-clock latency) when during a READ cycle. LDQM corresponds to DQ0 – DQ7, UDQM corresponds to DQ8–DQ15. Input LDQM,UDQM Ground. Supply V SS Power Supply: Voltage dependant on option. Supply V DD DQ Ground: Provide isolated ground to DQs for improved noise immunity. Supply V SSQ No Connect - NC Address Inputs: A0–A11 are sampled during the ACTIVE command (row- address A0–A11) and READ/WRITE command (column-address A0–A8; with A10 defining auto precharge) to select one location out of the memory array in the respective bank. A10 is sampled during a PRECHARGE command to determine if all banks are to be precharged (A10 HIGH) or bank selected by BA0, BA1 (A10 LOW). The address inputs also provide the op-code during a LOAD MODE REGISTER command. Input A0-A11 Data Input/Output : Data bus I/O DQ Bank Address Input(s): BA0 and BA1 define to which bank the ACTIVE, READ, WRITE or PRECHARGE command is being applied. These pins also provide the op-code during a LOAD MODE REGISTER command. Input BA0, BA1 Supply Input Input Input Input Type V DDQ /CAS, /RAS, /WE /CS CKE CLK Symbol Chip Select: /CS enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when /CS is registered HIGH. /CS provides for external bank selection on systems with multiple banks. /CS is considered part of the command code. Command Inputs : /CAS, /RAS, and /WE (along with /CS) define the command being entered. DQ Power: Provide isolated power to DQs for improved noise immunity. Clock Enable: CKE activates(HIGH) and deactivates(LOW) the CLK signal. Deactivating the clock provides PRECHARGE POWER-DOWN and SELF Refresh operation(all banks idle), ACTIVE POWER-DOWN(row active in any bank) or CLOCK SUSPEND operation(burst/access in progress). CKE is synchronous except after the device enters power-down and self refresh modes, where CKE becomes asynchronous until after exiting the same mode. The input buffers, including CLK, are disabled during power-down and self refresh modes, providing low standby power. CKE may be tied HIGH. Clock : CLK is driven by the system clock. All SDRAM input signals are sampled on the positive edge of CLK. CLK also increments the internal burst counter and controls the output registers. Description |
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