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BLF574 数据表(PDF) 5 Page - NXP Semiconductors |
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BLF574 数据表(HTML) 5 Page - NXP Semiconductors |
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5 / 18 page ![]() BLF574_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 February 2009 5 of 18 NXP Semiconductors BLF574 HF / VHF power LDMOS transistor 7. Application information 7.1 RF performance RF performance in a 500 W application circuit at 225 MHz. 7.1.1 1-Tone CW VDS = 50 V; IDq = 1000 mA; f = 225 MHz. VDS = 50 V; f = 225 MHz. (1) IDq = 400 mA (2) IDq = 600 mA (3) IDq = 800 mA (4) IDq = 1000 mA (5) IDq = 1200 mA (6) IDq = 1400 mA (7) IDq = 1800 mA Fig 2. Power gain and drain efficiency as functions of load power; typical values Fig 3. Power gain as function of load power; typical values 001aaj127 PL(PEP) (W) 0 600 400 200 26 24 28 30 Gp (dB) 22 40 20 60 80 0 ηD (%) Gp ηD PL (W) 0 500 400 200 300 100 001aaj128 26 24 28 30 Gp (dB) 22 (7) (6) (5) (4) (3) (2) (1) |
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