BLF574 datasheet(3/18 Pages) PHILIPS

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BLF574_2

Product data sheet

Rev. 02 — 24 February 2009

3 of 18

NXP Semiconductors

BLF574

HF / VHF power LDMOS transistor

Characteristics

Table 6.

DC characteristics

Tj = 25 °C; per section unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; ID = 2.5 mA

110

VGS(th)

gate-source threshold voltage

VDS = 10 V; ID = 250 mA

1.25 1.7

2.25 V

VGSq

gate-source quiescent voltage

VDS = 50 V; ID = 500 mA

1.35 1.85 2.35 V

IDSS

drain leakage current

VGS =0V; VDS =50V

2.8

µA

IDSX

drain cut-off current

VGS =VGS(th) + 3.75 V;

VDS =10V

37.5 -

IGSS

gate leakage current

VGS =11V; VDS = 0 V

280

gfs

forward transconductance

VDS =10V; ID = 12.5 A

RDS(on)

drain-source on-state resistance VGS =VGS(th) + 3.75 V;

ID = 8.33 A

0.14 -

Ω

Crs

feedback capacitance

VGS =0V; VDS =50V;

f=1MHz

1.5

Ciss

input capacitance

VGS =0V; VDS =50V;

f=1MHz

204

Coss

output capacitance

VGS =0V; VDS =50V;

f=1MHz

-72

Table 7.

RF characteristics

Mode of operation: CW; f = 225 MHz; RF performance at VDS =50V; IDq = 1000 mA for total device;

Tcase =25 °C; unless otherwise speciﬁed; in a class-AB production test circuit.

Symbol Parameter

Conditions

Min

Typ

Max Unit

power gain

PL = 400 W

26.5 28

RLin

input return loss

PL = 400 W

ηD

drain efﬁciency

PL = 400 W

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