2

9/27/00

SPT5510

Resolution

16

Bits

Differential Linearity

VI

–1.95

±0.6

1.95

LSB

Differential Linearity

IV

–4.0

±1.0

4.0

LSB

Integral Linearity

VI

–1.95

±0.75

1.95

LSB

Integral Linearity

IV

–4.0

±1.5

4.0

LSB

Integral Linearity Drift

IV

–0.2

0.2

LSB/

°C

Offset Drift

IV

–2.5

2.5

ppm FS/

°C

Monotonicity

V

15

Bits

Output Capacitance

V

10

pF

Gain Error

I

–2

0.4

2

% FS

Gain Error Tempco

With Ext Reference

V

50

ppm FS/

°C

Gain Error Tempco

With Internal Bandgap Ref

V

50

ppm FS/

°C

Offset Error

I

–4

4

µA

Compliance Voltage

IV

–1.2

2

V

Output Resistance

IV

0.88

1.1

1.32

k

Ω

Dynamic Performance

Conversion Rate

IV

200

MHz

Settling to

±0.01%

V

25

ns

Settling to

±0.0008%

V

35

ns

V2

ns

Glitch Energy

V

30

pV-s

Full Scale Output Current

With On-Chip References

V

19

mA

Rise Time/Fall Time

V2

ns

Spurious Free Dynamic Range

10 MHz Span

V

84

dB

V

76

dB

Supply Voltages

A/D ground voltage differential ................................ 0.5 V

Input Voltages

Digital input voltage (D15–D0, Clock)... ........... –2.5 to 0 V

Ref amp input voltage range .......................... –2.5 to 0 V

Output Currents

Bandgap reference output current .....................

±500 µA

Ref amplifier output current ................................

±2.5 mA

Temperature

Operating temperature ............................... –40 to +85

°C

Junction temperature .......................................... +150

°C

Lead, soldering (10 seconds) ............................. +250

°C

Storage .................................................... –65 to +150

°C

ELECTRICAL SPECIFICATIONS

TEST

TEST

SPT5510

PARAMETERS

CONDITIONS

LEVEL

MIN

TYP

MAX

UNITS

Note: 1. Operation at any Absolute Maximum Rating is not implied. See Electrical Specifications for nominal operating

conditions.

1

Measured at 0 V output using I-V.

2