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STM8L101F2 数据表(PDF) 46 Page - STMicroelectronics |
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STM8L101F2 数据表(HTML) 46 Page - STMicroelectronics |
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46 / 77 page ![]() Electrical parameters STM8L101xx 46/77 Doc ID 15275 Rev 7 Figure 17. Typical HSI accuracy at VDD = 3 V vs temperature Figure 18. Typical HSI accuracy at VDD = 1.65 V to 3.6 V vs temperature Low speed internal RC oscillator (LSI) Table 23. LSI oscillator characteristics (1) 1. VDD = 1.65 V to 3.6 V, TA = -40 to 125 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fLSI Frequency 26 38 56 kHz tsu(LSI) LSI oscillator wakeup time - TBD - µs fdrift(LSI) LSI oscillator frequency drift(2) 2. For each individual part, this value is the frequency drift from the initial measured frequency. 0 °C ≤TA ≤ 85°C -12 - 11 % ai17021 -5.0% -4.5% -4.0% -3.5% -3.0% -2.5% -2.0% -1.5% -1.0% -0.5% 0.0% 0.5% 1.0% 1.5% 2.0% 2.5% 3.0% 3.5% -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 Temperature (°C) 3V min 3V typical 3V max ai17019 -5.0% -4.5% -4.0% -3.5% -3.0% -2.5% -2.0% -1.5% -1.0% -0.5% 0.0% 0.5% 1.0% 1.5% 2.0% 2.5% 3.0% 3.5% -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 Temperature (°C) Min 1.65V-3.6V Max 1.65V-3.6V 3V typical |
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