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ADN2531ACPZ-R2 数据表(PDF) 3 Page - Analog Devices |
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ADN2531ACPZ-R2 数据表(HTML) 3 Page - Analog Devices |
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3 / 20 page  ADN2531 Rev. 0 | Page 3 of 20 SPECIFICATIONS VCC = VCCMIN to VCCMAX, TA = −40°C to +100°C, 12 Ω differential load impedance, crosspoint adjust disabled, unless otherwise noted. Typical values are specified at 25°C and IBIAS = IMOD = 40 mA with crosspoint adjust disabled, unless otherwise noted. Table 1. Parameter Min Typ Max Unit Test Conditions/Comments BIAS CURRENT (IBIAS) Bias Current Range 10 100 mA Bias Current While ALS Asserted 300 μA ALS = high Compliance Voltage1 0.6 VCC V IBIAS = 80 mA 0.55 VCC V IBIAS = 10 mA MODULATION CURRENT (IMODP, IMODN) Modulation Current IMOD Range 10 80 mA diff RLOAD = 5 Ω to 50 Ω differential 70 mA diff RLOAD = 100 Ω differential IMOD While ALS Asserted 500 μA diff ALS = high Crosspoint Adjust (CPA) Range2 35 65 % Rise Time (20% to 80%)2, 3, 4 26 32.5 ps Fall Time (20% to 80%)2, 3, 4 26 32.5 ps Random Jitter2, 3, 4 <0.5 ps rms Deterministic Jitter2, 4, 5 5.4 8.2 ps p-p 10.7 Gbps, CPA disabled 5.8 8.2 ps p-p 10.7 Gbps, CPA 35% to 65% Deterministic Jitter 2, 4, 6 5.4 8.2 ps p-p 11.3 Gbps, CPA disabled 5.8 8.2 ps p-p 11.3 Gbps, CPA 35% to 65% Differential |S22| −5 dB 5 GHz < f < 10 GHz, Z0 = 100 Ω differential7 −10.5 dB f < 5 GHz, Z0 = 100 Ω differential7 Compliance Voltage1 VCC − 1.1 VCC + 1.1 V DATA INPUTS (DATAP, DATAN) Input Data Rate 11.3 Gbps NRZ Differential Input Swing 0.15 1.6 V p-p diff Differential ac-coupled Differential |S11| −15 dB f < 10 GHz, Z0 = 100 Ω differential Input Termination Resistance 85 100 115 Ω Differential BIAS CONTROL INPUT (BSET) BSET Voltage to IBIAS Gain 100 mA/V BSET Input Resistance 800 1000 1200 Ω MODULATION CONTROL INPUT (MSET) MSET Voltage to IMOD Gain 120 mA/V MSET Input Resistance 600 Ω BIAS MONITOR (IBMON) IBMON to IBIAS Ratio 10 μA/mA Accuracy of IBIAS to IBMON Ratio −5.0 +5.0 % 10 mA ≤ IBIAS < 20 mA, RIBMON = 750 Ω −4.0 +4.0 % 20 mA ≤ IBIAS < 40 mA, RIBMON = 750 Ω −2.5 +2.5 % 40 mA ≤ IBIAS < 70 mA, RIBMON = 750 Ω −2 +2 % 70 mA ≤ IBIAS < 80 mA, RIBMON = 750 Ω AUTOMATIC LASER SHUTDOWN (ALS) VIH 2.0 V VIL 0.8 V IIL −20 +20 μA IIH 0 200 μA ALS Assert Time 2 μs Rising edge of ALS to falling edge of IBIAS and IMOD below 10% of nominal; see Figure 2 ALS Negate Time 10 μs Falling edge of ALS to rising edge of IBIAS and IMOD above 90% of nominal; see Figure 2 |
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