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ADN2531ACPZ-R2 数据表(PDF) 4 Page - Analog Devices

部件名 ADN2531ACPZ-R2
功能描述  11.3 Gbps, Active Back-Termination, Differential Laser Diode Driver
PDF  20 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADN2531ACPZ-R2 数据表(HTML) 4 Page - Analog Devices

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ADN2531
Rev. 0 | Page 4 of 20
Parameter
Min
Typ
Max
Unit
Test Conditions/Comments
POWER SUPPLY
VCC
3.0
3.3
3.6
V
ICC8
36
mA
VBSET = VMSET = 0 V
ISUPPLY9
55
62
mA
VBSET = VMSET = 0 V
1 The voltage between the pin with the specified compliance voltage and GND.
2 Specified for TA = −40°C to +85°C due to test equipment limitation. See the
section for data on performance for TA = −40°C to +100°C.
Typical Performance Characteristics
3 The pattern used is composed of a repetitive sequence of eight 1s followed by eight 0s at 10.7 Gbps.
4 Measured using the high speed characterization circuit shown in Figure 22.
5 The pattern used is K28.5 (00111110101100000101) at 10.7 Gbps rate.
6 The pattern used is K28.5 (00111110101100000101) at 11.3 Gbps rate.
7 Measured at balanced IMODP and IMODN.
8 Only includes current in the ADN2531 VCC pins.
9 Includes current in ADN2531 VCC pins and dc current in IMODP and IMODN pull-up inductors. See the
section for total supply current calculation.
Power Consumption
PACKAGE THERMAL SPECIFICATIONS
Table 2.
Parameter
Min
Typ
Max
Unit
Test Conditions/Comments
θJ-TOP
65
72.2
79.4
°C/W
Thermal resistance from junction to top of package.
θJ-PAD
2.6
5.8
10.7
°C/W
Thermal resistance from junction to bottom of exposed pad.
IC Junction Temperature
125
°C
90%
10%
ALS
IBIAS
AND IMOD
ALS
ASSERT TIME
ALS
NEGATE TIME
t
t
Figure 2. ALS Timing Diagram



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