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NCP1237 数据表(PDF) 5 Page - ON Semiconductor |
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NCP1237 数据表(HTML) 5 Page - ON Semiconductor |
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5 / 34 page ![]() NCP1237 http://onsemi.com 5 ELECTRICAL CHARACTERISTICS (For typical values TJ = 25°C, for min/max values TJ = −40°C to +125°C, VHV = 120 V, VCC = 11 V unless otherwise noted) Characteristics Test Condition Symbol Min Typ Max Unit HIGH VOLTAGE CURRENT SOURCE Minimum voltage for current source operation VHV(min) − − 60 V Current flowing out of VCC pin @ VHV = 60 V VCC = 0 V VCC = VCC(on) − 0.5 V Istart1 Istart2 0.2 4 0.5 8 0.8 12 mA Off−state leakage current VHV = 500 V Istart(off) − 25 50 mA SUPPLY Turn−on threshold level, VCC going up HV current source stop threshold VCC(on) 11.0 12.0 13.0 V HV current source restart threshold VCC(min) 9.5 10.5 11.5 V Turn−off threshold level VCC(off) 8.5 9.5 10.5 V Blanking duration on VCC(min) and VCC(off) detection Guaranteed by design tUVLO(blank) 7 10 13 ms VCC decreasing level at which the internal logic resets VCC(reset) 4.0 5.2 6.5 V VCC level for ISTART1 to ISTART2 transition VCC(inhibit) 0.4 0.65 0.9 V Internal current consumption (Note 6) DRV open, VFB = 3 V Cdrv = 1 nF, VFB = 3 V Off mode (skip or before startup) Fault mode (fault or latch) ICC1 ICC2 ICC3 ICC4 2.0 2.3 0.9 0.4 2.5 3.3 1.2 0.7 3.0 4.3 1.5 1.0 mA BROWN−OUT AND LINE OVERVOLTAGE Brown−out threshold voltage VHV going up VHV going down VHV(start) VHV(stop) 104 97 112 105 120 113 V Timer duration for line cycle drop−out tHV 43 61 79 ms Overvoltage threshold VHV going up VHV going down VHV(OV1) VHV(OV2) 400 395 430 425 460 455 V Blanking duration on line overvoltage detection tOV(blank) − 250 − ms OSCILLATOR Oscillator frequency fOSC 60 65 70 kHz Maximum duty ratio DMAX 75 80 85 % Frequency jittering amplitude, in percentage of FOSC Guaranteed by design Ajitter $4 $6 $8 % Frequency jittering modulation frequency Guaranteed by design Fjitter 85 125 165 Hz OUTPUT DRIVER Rise time, 10% to 90% of VCC VCC = VCC(min) + 0.2 V, CDRV = 1 nF trise − 22 34 ns Fall time, 90% to 10% of VCC VCC = VCC(min) + 0.2 V, CDRV = 1 nF tfall − 22 34 ns Current capability VCC = VCC(min) + 0.2 V, CDRV = 1 nF DRV high, VDRV = 0 V DRV low, VDRV = VCC IDRV(source) IDRV(sink) − − 1000 1000 − − mA Clamping voltage (maximum gate voltage) VCC = VCCmax – 0.2 V, DRV high VDRV(clamp) 11 13.5 16 V High−state voltage drop VCC = VCC(min) + 0.2 V, RDRV = 33 kW, DRV high VDRV(drop) − − 1 V 6. Internal supply current only, current in FB pin not included (current flowing through GND pin only). |
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