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MAT12 数据表(PDF) 4 Page - Analog Devices

部件名 MAT12
功能描述  Low Noise, Matched Dual Monolithic Transistor
PDF  4 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

MAT12 数据表(HTML) 4 Page - Analog Devices

  MAT12 Datasheet HTML 1Page - Analog Devices MAT12 Datasheet HTML 2Page - Analog Devices MAT12 Datasheet HTML 3Page - Analog Devices MAT12 Datasheet HTML 4Page - Analog Devices  
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MAT12
Preliminary Technical Data
Rev. PrA | Page 4 of 4
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Rating
Collector-Base Voltage (BVCBO)
Collector-Emitter Voltage (BVCEO)
Collector-Collector Voltage (BVCC)
Emitter-Emitter Voltage (BVEE)
40 V
40V
40V
40V
Collector Current (IC)
20 mA
Emitter Current (IE)
20 mA
Storage Temperature Range H Packages
−65°C to +150°C
Operating Temperature Range
−25°C to +85°C
Junction Temperature Range RM, CP Packages
−65°C to +150°C
Lead Temperature (Soldering, 60 sec)
300°C
1 Differential input voltage is limited to 5 V or the supply voltage, whichever
is less.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 3. Thermal Resistance
Package Type
θJA
θJC
Unit
TO-78 (H)
TBD
TBD
ºC/W
ESD CAUTION
©2010 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
PR09044-0-4/10(PrA)



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