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MAT12 数据表(PDF) 2 Page - Analog Devices

部件名 MAT12
功能描述  Low Noise, Matched Dual Monolithic Transistor
PDF  4 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

MAT12 数据表(HTML) 2 Page - Analog Devices

  MAT12 Datasheet HTML 1Page - Analog Devices MAT12 Datasheet HTML 2Page - Analog Devices MAT12 Datasheet HTML 3Page - Analog Devices MAT12 Datasheet HTML 4Page - Analog Devices  
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MAT12
Preliminary Technical Data
Rev. PrA | Page 2 of 4
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS; VCB = 15V
VCB = 15 V, IO = 10μA, TA = 25°C, unless otherwise specified.
Table 1.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Current Gain
hFE
IC = 1mA (note 1)
-25ºC≤TA≤+85ºC
IC = 100μA
-25ºC≤TA≤+85ºC
IC = 10μA
-25ºC≤TA≤+85ºC
IC = 1μA
-25ºC≤TA≤+85ºC
500
325
500
275
400
225
300
200
605
590
550
485
Current Gain Match
ΔhFE
10μA ≤ IC ≤ 1mA (note 2)
0.5
2
%
Noise Voltage Density
eN
IC = 1mA, VCB = 0 (note 3)
f O= 10Hz
f O= 100Hz
f O= 1kHz
f O= 10kHz
1.6
0.9
0.85
0.85
2
1
1
1
nV/√Hz
nV/√Hz
nV/√Hz
nV/√Hz
Offset Voltage
VOS
VCB = 0, 1μA ≤ IC ≤ 1mA
-25ºC≤TA≤+85ºC
10
50
70
μV
uV
Offset Voltage Change vs. VCB
ΔVOS/ΔVCB
0 ≤ VCB ≤ VMAX (note 4)
1μA ≤ IC ≤ 1mA (note 5)
10
25
μV
Offset Voltage Change vs. IC
Offset Voltage Drift
Breakdown Voltage
ΔVOS/ΔIC
ΔVOS/ΔT
BVCEO
1μA ≤ IC ≤ 1mA (note 5),
VCB=0
-25ºC≤TA≤+85ºC
-25ºC≤TA≤+85ºC, VOS
trimmed to zero
40
5
0.08
0.03
25
0.3
0.3
μV
μV/ ºC
μV/ ºC
V
Gain-Bandwidth Product
fT
IC = 100mA, VCE = 10V
200
MHz
Collector-Base Leakage Current
ICBO
VCB=VMAX
-25ºC≤TA≤+85ºC
25
2
200
pA
nA
Collector-Collector Leakage Current
ICC
VCC=VMAX (notes 6,7)
-25ºC≤TA≤+85ºC
35
3
200
pA
nA
Collector-Emitter Leakage Current
ICES
VBE=0 (notes 6,7)
-25ºC≤TA≤+85ºC
35
3
200
pA
nA



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