MAT12 datasheet(3/4 Pages) AD

3 / 4 page

Preliminary Technical Data

MAT12

Rev. PrA | Page 3 of 4

Input Bias Current

IC = 10μA

-25ºC≤TA≤+85ºC

Input Offset Current

IOS

IC = 10μA

-25ºC≤TA≤+85ºC

0.6

Input Offset Current Drift

ΔIOS/ΔT

IC=10μA (note 6)

-25ºC≤TA≤+85ºC

pA/ºC

Offset Current Change vs. VCB

ΔIOS/ΔVCB

0 ≤ VCB ≤ VMAX (note 4)

pA/V

Collector Saturation Voltage

VCE(SAT)

IC = 1mA, IB=100μA

0.05

0.1

Output Capacitance

COB

VCB=15V, IE=0

Bulk Resistance

rBE

10μA≤IC≤10mA (note6)

0.3

0.5

Collector-Collector Capacitance

CCC

VCC = 0

Notes:

Current gain is guaranteed with Collector-Base Voltage (VCB) swept from 0 to VMAX at the indicated collector currents.

Current Gain Match (ΔhFE) defined as: ΔhFE = (100(ΔIB)( hFE min)/IC)

Noise Voltage Density is guaranteed, but not 100% tested

This is the maximum change in VOS as VCB is swept from 0V to 40V.

Measured at IC=10μA and guaranteed by design over the specified range of IC

Guaranteed by Design

ICC and ICES are verified by measurement of ICBO

MAT12 数据表(PDF) 3 Page - Analog Devices

MAT12 数据表(HTML) 3 Page - Analog Devices

Html Pages

1 2 3 4

数据表下载

链接网址

MAT12 数据表(PDF) 3 Page - Analog Devices

MAT12 数据表(HTML) 3 Page - Analog Devices

Html Pages

1 2 3 4

数据表 下载

链接网址

数据表下载