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MCP2003 数据表(PDF) 13 Page - Microchip Technology |
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MCP2003 数据表(HTML) 13 Page - Microchip Technology |
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13 / 32 page ![]() 2010 Microchip Technology Inc. DS22230A-page 13 MCP2003/4 Bus Interface High Level Input Voltage VIH(LBUS) 0.6 VBB — 18 V Recessive state Low Level Input Voltage VIL(LBUS)-8 — 0.4 VBB V Dominant state Input Hysteresis VHYS — — 0.175 VBB VVIH(LBUS) – VIL(LBUS) Low Level Output Current IOL(LBUS) 40 — 200 mA Output voltage = 0.1 VBB, VBB = 12V Pull-up Current on Input IPU(LBUS)5 — 180 µA ~30 k internal pull-up @ VIH (LBUS) = 0.7 VBB Short Circuit Current Limit ISC 50 — 200 mA (Note 1) High Level Output Voltage VOH(LBUS) 0.9 VBB —VBB V Driver Dominant Voltage V_LOSUP —— 1.2 V VBB = 7V, RLOAD = 500 Driver Dominant Voltage V_HISUP —— 2.0 V VBB = 18V, RLOAD = 500 Driver Dominant Voltage V_LOSUP-1K 0.6 — — V VBB = 7V, RLOAD = 1 k Driver Dominant Voltage V_HISUP-1K 0.8 — — V VBB = 18V, RLOAD = 1 k Input Leakage Current (at the receiver during dominant bus level) IBUS_PAS_DOM -1 -0.4 — mA Driver off, VBUS = 0V, VBB = 12V Input Leakage Current (at the receiver during recessive bus level) IBUS_PAS_REC — 12 20 µA Driver off, 8V < VBB < 18V 8V < VBUs < 18V VBUS VBB Leakage Current (disconnected from ground) IBUS_NO_GND -10 1.0 +10 µA GNDDEVICE = VBB, 0V < VBUS < 18V, VBB = 12V Leakage Current (disconnected from VBB) IBUS —— 10 µA VBB = GND, 0 < VBUS < 18V, TA = -40 °C to +85°C (Note 2) Receiver Center Voltage VBUS_CNT 0.475 VBB 0.5 VBB 0.525 VBB VVBUS_CNT = (VIL (LBUS) + VIH (LBUS))/2 Slave Termination RSLAVE 20 30 47 k 2.2 DC Specifications (Continued) DC Specifications Electrical Characteristics: Unless otherwise indicated, all limits are specified for: VBB = 6.0V to 27.0V TA = -40°C to +125°C Parameter Sym Min. Typ. Max. Units Conditions Note 1: Internal current limited. 2.0 ms maximum recovery time (RLBUS = 0 , TX = 0.4 VREG, VLBUS = VBB). 2: Node has to sustain the current that can flow under this condition; bus must be operational under this condition. |
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