CLP200M datasheet(11/21 Pages) STMICROELECTRONICS

11 / 21 page

Obsolete

Product(s)

- Obsolete

Product(s)

CLP200M

11/21

Fig. 22 : CLP200M response to a positive surge.

Fig. 23 : CLP200 M response to a negative surge.

Fig. 24 : Power induction test.

Ω

TIPL

TIPS

GND

1/2 CLP200M

SLIC

LCP1511D

-48V

Rsense

V(RMS)

50 Hz

TEST

V(RMS)

Ω)

Duration

300

600

0.2s

Fig. 25 : Induction test behavior (Test 3a).

Figures 22 and 23 give the voltage and current be-

havior during positive and negative 4kV, 10/700

µs,

surge tests using a LCP1511D as second stage

protection device. The firing threshold values are

now adjusted to GND and to -Vbat (-48V) by the

action of the second stage protection which acts as

an external voltage reference.

As shown on these figures, the maximum remain-

ing voltage does not exceed +2.5V for positive

surges and -60V for negative surges.

Consequently, the CLP200M totally fulfills this test.

3.3.2 Power induction test

(Test 3a and 3b, table 2/K20)

Figures 25 and 26 show that the maximum remain-

ing voltage does not exceed +2V for positive

surges and -55V for negative surges.

Consequently, the CLP200M totally fulfills this test.

The test duration is not specified in test 3b. If the

duration exceeds 5s we do suggest to follow the

soldering and mounting recommendations given

on page 17 of this document.

CLP200M 数据表(PDF) 11 Page - STMicroelectronics

CLP200M 数据表(HTML) 11 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21

数据表下载