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ADN2526ACPZ-R2 数据表(PDF) 3 Page - Analog Devices

部件名 ADN2526ACPZ-R2
功能描述  11.3 Gbps Active Back-Termination, Differential Laser Diode Driver
PDF  16 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADN2526ACPZ-R2 数据表(HTML) 3 Page - Analog Devices

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ADN2526
Rev. A | Page 3 of 16
SPECIFICATIONS
VCC = VCCMIN to VCCMAX, TA = −40°C to +85°C, 50 Ω differential load resistance, unless otherwise noted. Typical values are specified at
TA = 25°C, IMOD
D
1 = 40 mA, unless otherwise noted.
Table 1.
Parameter
Min
Typ
Max
Unit
Test Conditions/Comments
BIAS CURRENT (IBIAS)
Bias Current Range
10
100
mA
Bias Current While ALS Asserted
300
μA
ALS = high
Compliance Voltage2
0.6
VCC
V
IBIAS = 100 mA
0.6
VCC
V
IBIAS = 10 mA
MODULATION CURRENT (IMODP, IMODN)
Modulation Current Range
10
80
mA diff
RLOAD = 5 Ω to 50 Ω differential
Modulation Current While ALS Asserted
0.5
mA diff
ALS = high
Rise Time (20% to 80%)3, 4
24
32.5
ps
Fall Time (20% to 80%)3, 4
24
32.5
ps
Random Jitter3, 4
0.4
0.9
ps rms
Deterministic Jitter3, 5
7.2
12
ps p-p
Includes pulse width distortion
Pulse Width Distortion3, 4
2
5
ps
PWD = (|THIGH – TLOW|)/2
Differential |S22|
−10
dB
5 GHz < f < 10 GHz, Z0 = 50 Ω differential
−14
dB
f < 5 GHz, Z0 = 50 Ω differential
Compliance Voltage2
VCC − 1.1
VCC + 1.1
V
DATA INPUTS (DATAP, DATAN)
Input Data Rate
11.3
Gbps
NRZ
Differential Input Swing
0.15
1.6
V p-p diff
Differential, ac-coupled
Differential |S11|
−16.8
dB
f < 10 GHz, Z0 = 100 Ω differential
Input Termination Resistance
100
Ω
Differential
BIAS CONTROL INPUT (BSET)
BSET Voltage to IBIAS Gain
90
mA/V
BSET Input Resistance
1000
Ω
MODULATION CONTROL INPUT (MSET)
MSET Voltage to IMOD Gain
50
78
100
mA/V
See Figure 29
MSET Input Resistance
1000
Ω
BIAS MONITOR (IBMON)
IBMON to IBIAS Ratio
10
μA/mA
Accuracy of IBIAS to IBMON Ratio
−5.0
+5.0
%
10 mA ≤ IBIAS < 20 mA, RIBMON = 1 kΩ
−4.0
+4.0
%
20 mA ≤ IBIAS < 40 mA, RIBMON = 1 kΩ
−2.5
+2.5
%
40 mA ≤ IBIAS < 70 mA, RIBMON = 1 kΩ
−2
+2
%
70 mA ≤ IBIAS < 100 mA, RIBMON = 1 kΩ
AUTOMATIC LASER SHUTDOWN (ALS)
VIH
2.0
V
VIL
0.8
V
IIL
−30
+30
μA
IIH
0
200
μA
ALS Assert Time
2
μs
Rising edge of ALS to falling edge of IBIAS and
IMOD below 10% of nominal, see Figure 2
ALS Negate Time
10
μs
Falling edge of ALS to rise of IBIAS and IMOD
above 90% of nominal, see Figure 2



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