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LTC4263 数据表(PDF) 23 Page - Linear Technology |
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LTC4263 数据表(HTML) 23 Page - Linear Technology |
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23 / 28 page ![]() LTC4274 23 4274fa APPLICATIONS INFORMATION VDD provides power for most of the internal LTC4274 cir- cuitry, and draws a maximum of 3mA. A ceramic decoupling cap of at least 0.1μF should be placed from VDD to DGND, as close as practical to each LTC4274 chip. Figure 16 shows a three component low dropout regulator for a negative supply to DGND generated from the negative VEE supply. VDD is tied to AGND and DGND is negative referenced to AGND. This regulator drives a single LTC4274 device. In Figure 17, DGND is tied to AGND in this boost converter circuit for a positive VDD supply of 3.3V above AGND. This circuit can drive multiple LTC4274 devices and opto couplers. VEE is the main supply that provides power to the PD. Because it supplies a relatively large amount of power and is subject to significant current transients, it requires more design care than a simple logic supply. For minimum IR loss and best system efficiency, set VEE near maximum amplitude (57V), leaving enough margin to account for transient over- or undershoot, temperature drift, and the line regulation specs of the particular power supply used. Bypass capacitance between AGND and VEE is very impor- tant for reliable operation. If a short circuit occurs at the output port it can take as long as 1μs for the LTC4274 to begin regulating the current. During this time the current is limited only by the small impedances in the circuit and a high current spike typically occurs, causing a voltage transient on the VEE supply and possibly causing the LTC4274 to reset due to a UVLO fault. A 1μF, 100V X7R capacitor placed near the VEE pin is recommended to minimize spurious resets. Isolating the Serial Bus The LTC4274 includes a split SDA pin (SDAIN and SDAOUT) to ease opto-isolation of the bidirectional SDA line. IEEE 802.3 Ethernet specifications require that network segments (including PoE circuitry) be electrically isolated from the chassis ground of each network interface device. However, network segments are not required to be isolated Figure 17. Positive VDD Boost Converter Figure 16. Negative LDO to DGND 4274 F17 R54 56k C79 2200pF GND ITH/RUN LTC3803 VCC 2 5 VFB 1 3 NGATE Q15 FDC2512 Q13 FMMT723 Q14 FMMT723 SENSE 6 4 VEE C74 100μF 6.3V C75 10μF 16V L3 100μH SUMIDA CDRH5D28-101NC R51 4.7k 1% R53 4.7k 1% R52 3.32k 1% 3.3V AT 400mA R55 806Ω 1% R59 0.100Ω 1%, 1W R56 47.5k 1% R57 1k D28 B1100 R58 10Ω R60 10Ω C73 10μF 6.3V L4 10μH SUMIDA CDRH4D28-100NC + C77 0.22μF 100V C78 0.22μF 100V C76 10μF 63V PD VOLTAGE (V) 0 0.0 0.2 0.6 1.0 10 20 30 40 4274 F16 50 1.4 0.4 0.8 1.2 60 802.3af FOLDBACK SOA 75ms AT 90°C |
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