IPW65R080CFD datasheet(4/12 Pages) INFINEON

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650V CoolMOS™ CFD Power Transistor

IPW65R080CFD

Maximum ratings

Final Data Sheet

Rev. 2.0, 2011-02-02

Maximum ratings

at Tj = 25 °C, unless otherwise specified.

Thermal characteristics

Table 2

Maximum ratings

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Continuous drain current1)

1) Limited by Tj,max.

43.3

TC= 25 °C

27.4

TC= 100°C

Pulsed drain current2)

2) Pulse width tp limited by Tj,max

ID,pulse

137

TC=25 °C

Avalanche energy, single pulse

EAS

1160

ID=8.7 A,VDD=50 V

Avalanche energy, repetitive

EAR

1.76

Avalanche current, repetitive

IAR

8.7

MOSFET dv/dt ruggedness

dv/dt

V/ns VDS=0...480 V

Gate source voltage

VGS

-20

static

-30

AC (f>1 Hz)

Power dissipation

Ptot

391

TC=25 °C

Operating and storage temperature Tj,Tstg

-55

150

°C

Mounting torque

Ncm M3 and M3.5 screws

Continuous diode forward current

43.3

TC=25 °C

Diode pulse current2)

IS,pulse

140

TC=25 °C

Reverse diode dv/dt3)

3) ISD≤ID, di/dt≤900A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low and high side switch

dv/dt

V/ns VDS=0...400 V, ISD  ID,

Tj=25 °C

Maximum diode commutation

speed3)

dif/dt

900

A/µs

Table 3

Thermal characteristics TO-247

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Thermal resistance, junction - case RthJC

0.32

°C/W

Thermal resistance, junction -

ambient

RthJA

leaded

Soldering temperature,

wavesoldering only allowed at

leads

Tsold

260

°C

1.6 mm (0.063 in.)

from case for 10 s

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