IPW65R080CFD datasheet(5/12 Pages) INFINEON

5 / 12 page

650V CoolMOS™ CFD Power Transistor

IPW65R080CFD

Electrical characteristics

Final Data Sheet

Rev. 2.0, 2011-02-02

Electrical characteristics

Electrical characteristics, at Tj=25 °C, unless otherwise specified.

Table 4

Static characteristics

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Drain-source breakdown voltage V(BR)DSS

650

VGS=0 V, ID=1 mA

Gate threshold voltage

VGS(th)

3.5

4.5

VDS=VGS, ID=1.76 mA

Zero gate voltage drain current

IDSS

µA

VDS=650 V, VGS=0 V,

Tj=25 °C

-500

VDS=650 V, VGS=0 V,

Tj=150 °C

Gate-source leakage current

IGSS

100

VGS=20 V, VDS=0 V

Drain-source on-state resistance RDS(on)

0.072

0.08



VGS=10 V, ID=17.6 A,

Tj=25 °C

-0.19

VGS=10 V, ID=17.6 A,

Tj=150 °C

Gate resistance

-0.75



f=1 MHz, open drain

Table 5

Dynamic characteristics

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Input capacitance

Ciss

-5030

VGS=0 V, VDS=100 V,

f=1 MHz

Output capacitance

Coss

-215

Effective output capacitance,

energy related1)

1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS

Co(er)

-135

VGS=0 V,

VDS=0...480 V

Effective output capacitance, time

related2)

2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS

Co(tr)

-675

ID=constant, VGS=0 V

VDS=0...480V

Turn-on delay time

td(on)

-20

VDD=400 V,

VGS=13 V, ID=26.3 A,

RG=1.8 

Rise time

-18

Turn-off delay time

td(off)

-85

Fall time

-6

IPW65R080CFD 数据表(PDF) 5 Page - Infineon Technologies AG

IPW65R080CFD 数据表(HTML) 5 Page - Infineon Technologies AG

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

数据表下载