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IPW65R080CFD 数据表(PDF) 6 Page - Infineon Technologies AG |
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IPW65R080CFD 数据表(HTML) 6 Page - Infineon Technologies AG |
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6 / 12 page ![]() 650V CoolMOS™ CFD Power Transistor IPW65R080CFD Electrical characteristics Final Data Sheet 6 Rev. 2.0, 2011-02-02 Table 6 Gate charge characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Gate to source charge Qgs -25 - nC VDD=480 V, ID=26.3 A, VGS=0 to 10 V Gate to drain charge Qgd -120 - Gate charge total Qg -170 - Gate plateau voltage Vplateau -6.4 - V Table 7 Reverse diode characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Diode forward voltage VSD -0.9 - V VGS=0 V, IF=26.3 A, Tj=25 °C Reverse recovery time trr -180 - ns VR=400 V, IF=26.3 A, diF/dt=100 A/µs Reverse recovery charge Qrr -1 - µC Peak reverse recovery current Irrm -10 - A |
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