drain

pin 2

gate

pin 1

source

pin 3

650V CoolMOS™ CFD Power Transistor

IPW65R080CFD

Final Data Sheet

2

Rev. 2.0, 2011-02-02

1

Description

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,

designed according to the superjunction (SJ) principle and pioneered by Infineon

Technologies. 650V CoolMOS™ CFD series combines the experience of the

leading SJ MOSFET supplier with high class innovation. The resulting devices

provide all benefits of a fast switching SJ MOSFET while offering an extremely fast

and robust body diode. This combination of extremely low switching, commutation

and conduction losses together with highest robustness make especially resonant

switching applications more reliable, more efficient, lighter, and cooler

Features

•

Ultra-fast body diode

•

Very high commutation ruggedness

•

•

Easy to use/drive

•

•

Pb-free plating, Halogen free mold compound

Applications

650V CoolMOS™ CFD is especially suitable for resonant switching PWM stages for

e.g. PC Silverbox, LCD TV, Lighting, Server,Telecom, and Solar

Please note: For MOSFET paralleling the use of ferrite beads on the gate

or separate totem poles is generally recommended.

1) J-STD20 and JESD22

Table 1

Key Performance Parameters

Parameter

Value

Unit

Related Links

700

V

IFX CoolMOS Webpage

0.08



IFX Design tools

900

A/µs

1µC

180

ns

10

A

170

nC

137

A

12.5

µJ

Type

Package

Marking

IPW65R080CFD

PG-TO247

65F6080