Micrel

MICRF219

June 2011

3

M9999-060811

(408) 944-0800

.

.

.

Storage Temperature (Ts)...................... -65ºC t +150°C

wer ......................... +10dBm

..

..

.

.............+3.0V to +3.6V

......... –40°C to +105°C

............................. 3.6V

.......................

−20dBm

Receive Modulation Duty Cycle

Frequency Range...........................300MHz to 450MHz

ica Character

z unle

rwise noted. Bold values

indicate –40

ded), re

ence oscillator frequency = 13.52127MHz.

on

Min.

Typ.

Max.

Units

Supply Voltage (VDD) ..................................... .......... +5V

Supply voltage (VDD)................

Input Voltage. .................................................. .......... +5V

Junction Temperature ....................... .............

.

.....+150ºC

Input Voltage (Vin) ....................

Lead Temperature (soldering, 10sec.) ................ ...300°C

Maximum Input RF Power.........

.

o

Maximum Receiver Input Po

(3)

EDS Rating ..... .......................... ............... 2KV HBM

l

Electr

istics

Specifications apply

, f

433.92 MH

ss othe

1kbps data rate (Manchester enco

fer

Parameter

Conditi

4.0

Operating Supply Current

6.0

mA

Co

z

Shutdown Current

0.15

µA

Receiver

Image Rejection

25

dB

0.86

1

= 433.92MHz

1.2

MHz

-2

−110

Receiver Sensitivity @ 1

(Note 4)

kbps

f

= 433.92MHz, 50Ω BER=10

−110

dBm

RX

-2

235

IF Bandwidth

330

kHz

2 – j235

3

Antenna Input Impedance

RX

Hz

74

Ω

f

= 433.92M

19 – j1

Receive Modulation Duty Cyc

20

80

%

le

Note 5

AGC Attack / Decay Ratio

0.1

AGC Pin Leakage Current

±30

±800

nA

nA

1.15

V

AGC Dynamic Range

1.70

V

Reference Oscillator

9.81563

Reference Oscillator Frequency

2127

MHz

13.5

Reference Oscillator Input

Impedance

RO1

1.6

kΩ

Reference Oscillator Bias Voltage

RO2

1.15

V