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ADL5511ACPZ-R7 数据表(PDF) 21 Page - Analog Devices

部件名 ADL5511ACPZ-R7
功能描述  Envelope and TruPwr RMS Detector
PDF  28 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADL5511ACPZ-R7 数据表(HTML) 21 Page - Analog Devices

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Data Sheet
ADL5511
Rev. A | Page 21 of 28
For applications that are not response time critical, a
relatively large capacitor can be placed on the FLT4.
There is no maximum capacitance limit for CFLT4.
Figure 50 shows how output noise, rise time and fall time
vary vs. CFLT4 when the ADL5511 is driven by an 1.9 GHz
LTE carrier with a bandwidth of 10 MHz (LTE Test Model
E-TM1_1_10MHz, peak-to-average ratio = 11.99 dB).
0.1
1
10
100
1000
10000
100000
1000000
10000000
0
100
200
300
400
500
600
700
800
1
10
100
1000
CFLT4 (nF)
OUTPUT NOISE (mV p-p)
10% TO 90% RISE TIME (µs)
90% TO 10% FALL TIME (µs)
Figure 50. Output Noise, Rise and Fall Times vs. CFLT4 Capacitance, 10 MHz
BW LTE Carrier (LTE Test Model E-TM1_1_10MHz) at 1.9 GHz with PIN = 0 dBm
ENVELOPE TRACKING ACCURACY
The envelope tracking accuracy of the ADL5511 is measured in
terms of the higher order distortion of the envelope output when
the RF input signal is AM modulated using a low-harmonic
sinusoid at a given frequency. Such an input sinusoidal envelope
has been generated using the ADL5390 multiplier modulator.
This generates a double sideband AM modulated signal of a
known modulation index. In this measurement, the ADL5511
acts as free-running AM demodulator without requiring a local
oscillator to demodulate the signal.
–80
–70
–60
–50
–40
–30
–20
–10
0
10
20
–35
–30
–25
–20
–15
–10
–5
0
5
10
15
RFIN (dBm)
THD (dBc)
CARRIER SUPPRESSION (dBc)
ENVELOPE GAIN (dB)
Figure 51. THD on VENV vs. RF Input Level; 1900 MHz RF Input, AM Modulated
by a 20 MHz Sine Wave (Modulation Index = 0.25), VENV Output AC-Coupled
into a 50 Ω Spectrum Analyzer Load
Figure 51 shows such a plot total harmonic distortion (THD)
of the VENV output vs. RF input power for the modulation
index of 0.25. As the input power level increases, the THD
improves until it sharply degrades at an input power level of
approximately 13 dBm. This sharp decrease is caused by the
clipping of the AM signal’s peak envelope. Figure 51 also shows
carrier leakage at VENV in dBc with respect to the input carrier
amplitude.
This measurement, when conducted over the full input power
range of the ADL5511, suffers from measurement inaccuracies
of the input modulated signal due to the spectrum analyzer’s
noise floor and therefore does not accurately reveal the ADL5511’s
limitations at the lower end of the measurement range. In
addition to this, the process of generating an AM signal for this
test (using the ADL5390 multiplier) is not perfect and resulted
in a source signal whose envelope was not harmonically pure.
TIME DOMAIN ENVELOPE TRACKING ACCURACY
The envelope tracking accuracy of the ADL5511 can also be
assessed in the time domain by looking at the input peak power
levels that cause clipping.
The usable rms input power range of the ADL5511 varies
depending on the desired accuracy level and the peak-to-
average ratio of the input signal. Figure 4 shows the linear
operating range of the VENV output when the RF input is
driven by unmodulated sine waves at various frequencies.
This shows operation up to rms input levels of approximately
19 dBm. If the signal has a peak-to-average ratio that is greater
than the square root of two, the usable input range on RFIN
will decrease. In general, the maximum input power for linear
operation should be determined by the peak envelope power
(PEP) of the input signal. Figure 52 shows the time-domain
response of the VENV output to a 900 MHz LTE carrier with
a bandwidth of 20 MHz (Test Model E-TM1_2_20MHz).
The signal level of the carrier (7 dBm rms, 19 dBm PEP)
was deliberately increased until clipping was observed at
the VENV output.
Note that the peak envelope power of a signal is derived
based on the rms level of the signal during a peak cycle, that is
V p-p/√2. For example, a signal that achieves a peak voltage of
10 V (or 20 V p-p) has a PEP of 30 dBm. According to this
definition, the PEP of a sine wave is equal to its rms power
level because it has a constant envelope.
Figure 52. VENV Response to a 20 MHz LTE Carrier with a PEP of 19 dBm that
has been Triggered to Capture the Envelope’s Peak Level



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