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MMA6525KW 数据表(PDF) 10 Page - Freescale Semiconductor, Inc |
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MMA6525KW 数据表(HTML) 10 Page - Freescale Semiconductor, Inc |
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10 / 56 page ![]() Sensor 10 Freescale Semiconductor, Inc. MMA65xx 2.7 Dynamic Electrical Characteristics - Supply and SPI VL ≤ (VCC - VSS) ≤ VH, TL ≤ TA ≤ TH, |ΔTA| < 25 K/min unless otherwise specified 1. Parameters tested 100% at final test. 2. Parameters tested 100% at wafer probe. 3. Parameters verified by characterization 4. (*) Indicates a critical characteristic. 5. Verified by qualification testing. 6. Parameters verified by pass/fail testing in production. 7. Functionality verified 100% via scan. Timing characteristic is directly determined by internal oscillator frequency. 8. N/A 9. Devices are trimmed at 100 Hz with 1000 Hz low-pass filter option selected. Response is corrected to 0 Hz response. 10.Low-pass filter cutoff frequencies shown are -3 dB referenced to 0 Hz response. 11.Power supply ripple at frequencies greater than 900 kHz should be minimized to the greatest extent possible. 12.Time from falling edge of CS to ARM_X, ARM_Y output valid 13.N/A 14.Thermal resistance between the die junction and the exposed pad; cold plate is attached to the exposed pad. 15.Device characterized at all values of VL & VH. Production test is conducted at all typical voltages (VTYP) unless otherwise noted. 16.Data Path Latency is the signal latency from g-cell to SPI output disregarding filter group delays. 17.Filter characteristics are specified independently, and do not include g-cell frequency response. 18.Electrostatic Deflection Test completed during wafer probe. 19.Verified by Simulation. 20.Acceleration Data Request timing constraint only applies for proper operation of the Arming Function # Characteristic Symbol Min Typ Max Units 144 145 146 Power-On Recovery Time (VCC = VCCMIN to first SPI access) Power-On Recovery Time (Internal POR to first SPI access) SPI Reset Activation Time (CS high to Reset) tOP tOP tSPI_RESET — — — — — — 10 840 300 ms μs ns (3) (3,7) (7) 147 148 Internal Oscillator Frequency Test Frequency - Divided from Internal Oscillator *fOSC fOSCTST 7.6 0.95 8 1 8.4 1.05 MHz MHz (7) (1) 149 Serial Interface Timing (See Figure 7, CMISO ≤ 80pF, RMISO ≥ 10kW) Clock (SCLK) period (10% of VCC to 10% of VCC)* tSCLK 120 — — ns (3) 150 Clock (SCLK) high time (90% of VCC to 90% of VCC) *tSCLKH 40 — — ns (3) 151 Clock (SCLK) low time (10% of VCC to 10% of VCC) *tSCLKL 40 — — ns (3) 152 Clock (SCLK) rise time (10% of VCC to 90% of VCC) tSCLKR —15 40 ns (19) 153 Clock (SCLK) fall time (90% of VCC to 10% of VCC) tSCLKF —15 28 ns (19) 154 CS asserted to SCLK high (CS = 10% of VCC to SCLK = 10% of VCC) tLEAD 60 — — ns (3) 155 CS asserted to MISO valid (CS = 10% of VCC to MISO = 10/90% of VCC) tACCESS —— 60 ns (3) 156 Data setup time (MOSI = 10/90% of VCC to SCLK = 10% of VCC) *tSETUP 20 — — ns (3) 157 MOSI Data hold time (SCLK = 90% of VCC to MOSI = 10/90% of VCC) *tHOLD_IN 10 — — ns (3) 158 MISO Data hold time (SCLK = 90% of VCC to MISO = 10/90% of VCC) *tHOLD_OUT 0— — ns (3) 159 SCLK low to data valid (SCLK = 10% of VCC to MISO = 10/90% of VCC) *tVALID —— 35 ns (3) 160 SCLK low to CS high (SCLK = 10% of VCC to CS = 90% of VCC) *tLAG 60 — — ns (3) 161 CS high to MISO disable (CS = 90% of VCC to MISO = Hi Z) *tDISABLE —— 60 ns (3) 162 CS high to CS low (CS = 90% of VCC to CS = 90% of VCC) *tCSN 526 — — ns (3) 163 SCLK low to CS low (SCLK = 10% of VCC to CS = 90% of VCC) *tCLKCS 50 — — ns (3) 164 CS high to SCLK high (CS = 90% of VCC to SCLK = 90% of VCC) tCSCLK 50 — — ns (19) |
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