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MMA6525KW 数据表(PDF) 10 Page - Freescale Semiconductor, Inc

部件名 MMA6525KW
功能描述  Dual-Axis SPI Inertial Sensor
PDF  56 Pages
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制造商  FREESCALE [Freescale Semiconductor, Inc]
网页  http://www.freescale.com
标志 FREESCALE - Freescale Semiconductor, Inc

MMA6525KW 数据表(HTML) 10 Page - Freescale Semiconductor, Inc

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Sensor
10
Freescale Semiconductor, Inc.
MMA65xx
2.7
Dynamic Electrical Characteristics - Supply and SPI
VL ≤ (VCC - VSS) ≤ VH, TL ≤ TA ≤ TH, |ΔTA| < 25 K/min unless otherwise specified
1. Parameters tested 100% at final test.
2. Parameters tested 100% at wafer probe.
3. Parameters verified by characterization
4. (*) Indicates a critical characteristic.
5. Verified by qualification testing.
6. Parameters verified by pass/fail testing in production.
7. Functionality verified 100% via scan. Timing characteristic is directly determined by internal oscillator frequency.
8. N/A
9. Devices are trimmed at 100 Hz with 1000 Hz low-pass filter option selected. Response is corrected to 0 Hz response.
10.Low-pass filter cutoff frequencies shown are -3 dB referenced to 0 Hz response.
11.Power supply ripple at frequencies greater than 900 kHz should be minimized to the greatest extent possible.
12.Time from falling edge of CS to ARM_X, ARM_Y output valid
13.N/A
14.Thermal resistance between the die junction and the exposed pad; cold plate is attached to the exposed pad.
15.Device characterized at all values of VL & VH. Production test is conducted at all typical voltages (VTYP) unless otherwise noted.
16.Data Path Latency is the signal latency from g-cell to SPI output disregarding filter group delays.
17.Filter characteristics are specified independently, and do not include g-cell frequency response.
18.Electrostatic Deflection Test completed during wafer probe.
19.Verified by Simulation.
20.Acceleration Data Request timing constraint only applies for proper operation of the Arming Function
#
Characteristic
Symbol
Min
Typ
Max
Units
144
145
146
Power-On Recovery Time (VCC = VCCMIN to first SPI access)
Power-On Recovery Time (Internal POR to first SPI access)
SPI Reset Activation Time (CS high to Reset)
tOP
tOP
tSPI_RESET
10
840
300
ms
μs
ns
(3)
(3,7)
(7)
147
148
Internal Oscillator Frequency
Test Frequency - Divided from Internal Oscillator
*fOSC
fOSCTST
7.6
0.95
8
1
8.4
1.05
MHz
MHz
(7)
(1)
149
Serial Interface Timing (See Figure 7, CMISO ≤ 80pF, RMISO ≥ 10kW)
Clock (SCLK) period (10% of VCC to 10% of VCC)*
tSCLK
120
ns
(3)
150
Clock (SCLK) high time (90% of VCC to 90% of VCC)
*tSCLKH
40
ns
(3)
151
Clock (SCLK) low time (10% of VCC to 10% of VCC)
*tSCLKL
40
ns
(3)
152
Clock (SCLK) rise time (10% of VCC to 90% of VCC)
tSCLKR
—15
40
ns
(19)
153
Clock (SCLK) fall time (90% of VCC to 10% of VCC)
tSCLKF
—15
28
ns
(19)
154
CS asserted to SCLK high (CS = 10% of VCC to SCLK = 10% of VCC)
tLEAD
60
ns
(3)
155
CS asserted to MISO valid (CS = 10% of VCC to MISO = 10/90% of VCC)
tACCESS
——
60
ns
(3)
156
Data setup time (MOSI = 10/90% of VCC to SCLK = 10% of VCC)
*tSETUP
20
ns
(3)
157
MOSI Data hold time (SCLK = 90% of VCC to MOSI = 10/90% of VCC)
*tHOLD_IN
10
ns
(3)
158
MISO Data hold time (SCLK = 90% of VCC to MISO = 10/90% of VCC)
*tHOLD_OUT
0—
ns
(3)
159
SCLK low to data valid (SCLK = 10% of VCC to MISO = 10/90% of VCC) *tVALID
——
35
ns
(3)
160
SCLK low to CS high (SCLK = 10% of VCC to CS = 90% of VCC)
*tLAG
60
ns
(3)
161
CS high to MISO disable (CS = 90% of VCC to MISO = Hi Z)
*tDISABLE
——
60
ns
(3)
162
CS high to CS low (CS = 90% of VCC to CS = 90% of VCC)
*tCSN
526
ns
(3)
163
SCLK low to CS low (SCLK = 10% of VCC to CS = 90% of VCC)
*tCLKCS
50
ns
(3)
164
CS high to SCLK high (CS = 90% of VCC to SCLK = 90% of VCC)
tCSCLK
50
ns
(19)



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