CY25200

Document Number: 38-07633 Rev. *H

Page 9 of 15

Absolute Maximum Rating

Supply Voltage (VDD)...................................... –0.5 to +7.0 V

Storage Temperature (non-condensing) ... –55

C to +125 C

Junction Temperature .............................. –40

C to +125 C

Data Retention at Tj = 125

C ...............................> 10 years

Package Power Dissipation...................................... 350 mW

Static Discharge Voltage......................................... > 2000 V

(per MIL-STD-883, Method 3015)

Recommended Crystal Specifications

Parameter

Description

Comments

Min

Typ

Max

Unit

Nominal Crystal Frequency

Parallel resonance, fundamental

mode, AT cut

8–

30

MHz

Nominal Load Capacitance

Internal load caps

6

–

30

pF

Equivalent Series Resistance

(ESR)

Fundamental mode

–

–

25



Ratio of Third Overtone Mode

ESR to Fundamental Mode ESR

are much less than the maximum

specification

3–

–



DL

Crystal Drive Level

No external series resistor assumed

–

0.5

2

mW

Recommended Operating Conditions

Parameter

Description

Min

Typ

Max

Unit

Operating Voltage

3.135

3.3

3.465

V

Operating Voltage

3.135

3.3

3.465

V

Operating Voltage

2.375

2.5

2.625

V

Ambient Commercial Temp

0

–

70

C

–

–

15

pF

–

–

15

pF

3

–

200

MHz

3

–

166

MHz

8

–

166

MHz

Clock Input

8

–

166

MHz

Crystal Input

8

–

30

MHz

ramps must be monotonic)

0.05

–

500

ms

DC Electrical Specifications

Parameter[2]

Name

Description

Min

Typ

Max

Unit

Output High Current

12

24

–

mA

Output Low Current

12

24

–

mA

Output High Current

8

16

–

mA

Output Low Current

8

16

–

mA

Input High Voltage

0.7

–

1.0

Input Low Voltage

0–

0.3

Supply Current

–

–

33

mA

Supply Current

–

–

20

mA

Supply Current

–

–

26

mA

Power Down Current

–

–

50

A

Output Leakage

–

–

10

A

Notes

2. Not 100% tested, guaranteed by design.

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