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STRH8N10 数据表(PDF) 6 Page - STMicroelectronics

部件名 STRH8N10
功能描述  Rad-Hard N-channel 100 V, 6 A Power MOSFET
PDF  18 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STRH8N10 数据表(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STRH8N10
6/18
Doc ID 010029 Rev 2
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 50 V, ID = 4 A,
RG = 4.7 Ω, VGS = 12 V
6
4
13
3
10.5
10.5
21.5
5.5
15
17
30
8
ns
ns
ns
ns
Table 8.
Source drain diode(1)
1.
Refer to the
Figure 16: Source drain diode.
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
ISD
ISDM
(2)
2.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current (pulsed)
6
24
A
A
VSD
(3)
3.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 8 A, VGS = 0
ISD = 8 A, VGS = 0,
TC = 125 °C
1.5
1.275
V
trr
(4)
Qrr
(4)
IRRM
(4)
4.
Not tested in production, guaranteed by process.
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A, di/dt = 100
A/µs
VDD= 17 V, Tj = 25 °C
196
245
1.2
10
294
ns
µC
A
trr
(4)
Qrr
(4)
IRRM
(4)
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A,
di/dt = 100 A/µs, VDD=
17 V, Tj = 150 °C
282
352
1.7
10.5
422
ns
µC
A



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