STRH8N10 datasheet(9/18 Pages) STMICROELECTRONICS

数据搜索系统，热门电子元器件搜索

STRH8N10 数据表(PDF) 9 Page - STMicroelectronics

部件名	STRH8N10

功能描述	Rad-Hard N-channel 100 V, 6 A Power MOSFET

PDF	18 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

9 / 18 page

STRH8N10

Radiation characteristics

Doc ID 010029 Rev 2

9/18

Figure 2.

Single event effect, SOA

Figure 3.

Single event effect, bias circuit(a)

Bias condition during radiation refer to

Table 12: Single event effect (SEE), safe operating area (SOA) .

100

-20

-15

-10

-5

Vgs (V)

Kr (32 MeV.cm²/mg)

ALLDATASHEET是否为您带来帮助? [ DONATE ]
关于 Alldatasheet \| 广告服务 \| 联系我们 \| 隐私政策 \| 数据表链接 \| 链接交换 \| 制造商名单 All Rights Reserved©Alldatasheet.com
Mirror Sites English : Alldatasheet.com \| English : Alldatasheet.net \| Chinese : Alldatasheetcn.com \| German : Alldatasheetde.com \| Japanese : Alldatasheet.jp Russian : Alldatasheetru.com \| Korean : Alldatasheet.co.kr \| Spanish : Alldatasheet.es \| French : Alldatasheet.fr \| Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com \| Polish : Alldatasheet.pl \| Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in \| Mexican : Alldatasheet.com.mx \| British : Alldatasheet.co.uk \| New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com \| icmetro.com

ALLDATASHEET是否为您带来帮助? [ DONATE ]

Family Site : ic2ic.com | icmetro.com