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STRH8N10 数据表(PDF) 3 Page - STMicroelectronics |
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STRH8N10 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 18 page ![]() STRH8N10 Electrical ratings Doc ID 010029 Rev 2 3/18 1 Electrical ratings (TC = 25°C unless otherwise specified) Table 2. Absolute maximum ratings (pre-irradiation) Symbol Parameter Value Unit VDS (1) 1. This rating is guaranteed @ TJ > 25 °C (see Figure 10: Normalized BVDSS vs temperature). Drain-source voltage (VGS = 0) 100 V VGS (2) 2. This value is guaranteed over the full range of temperature. Gate-source voltage ±20 V ID (3) 3. Rated according to the Rthj-case + Rthc-s. Drain current (continuous) at TC= 25°C 6 A ID (1) Drain current (continuous) at TC= 100°C 4.1 A IDM (4) 4. Pulse width limited by safe operating area. Drain current (pulsed) 24 A PTOT (1) Total dissipation at TC= 25°C 25 W dv/dt (5) 5. ISD ≤ 6 A, di/dt ≤ 1060 A/µs, VDD = 80% V(BR)DSS Peak diode recovery voltage slope 6.4 V/ns Tstg Storage temperature -55 to 150 °C Tj Max. operating junction temperature 150 °C Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 5.0 °C/W Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 4A EAS (1) Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) 457 mJ EAS Single pulse avalanche energy (starting Tj=110°C, Id=Iar, Vdd=50V) 134 mJ |
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