STRH8N10

Radiation characteristics

Doc ID 010029 Rev 2

7/18

3

Radiation characteristics

The technology of the STMicroelectronics rad-hard Power MOSFETs is extremely resistant

to radiative environments. Every manufacturing lot is tested for total ionizing dose, according

to the ESCC 22900 specification window 1, using the TO-39 package. Both pre-irradiation

and post-irradiation performances are tested and specified using the same circuitry and test

conditions in order to provide a direct comparison.

Total dose radiation (TID) testing

One bias conditions using the TO-39 package:

The following parameters are measured (see

Table 9, Table 10 and Table 11):

●

before irradiation

●

after irradiation

●

after 24 hrs @ room temperature

●

after 168 hrs @ 100 °C anneal

Table 9.

Symbol

Parameter

Test conditions

Drift values

Zero gate voltage drain current

+1

µA

Gate body leakage current

1.5

-1.5

nA

Drain-to-source breakdown

voltage

-25%

V

Gate threshold voltage

-60% / + 30%

V

Static drain-source on resistance

±10%

Ω

Table 10.

Symbol

Parameter

Test conditions

Drift values

Total gate charge

-5% / + 40%

nC

Gate-source charge

±35%

Gate-drain charge

-5% / + 130%