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STTH802-Y 数据表(PDF) 1 Page - STMicroelectronics |
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STTH802-Y 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 7 page ![]() This is information on a product in full production. October 2012 Doc ID 018563 Rev 2 1/7 7 STTH802-Y Automotive ultrafast recovery diode Datasheet production data Features ■ Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery time ■ High junction temperature ■ AEC-Q101 qualified Description The STTH802-Y uses ST's new 200 V planar Pt doping technology, and is specially suited for switching mode base drive and transistor circuits. Packaged in DPAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection for automotive application. Table 1. Device summary IF(AV) 8 A VRRM 200 V Tj (max) 175 °C VF (typ) 0.8 V trr (typ) 17 ns NC A K K A DPAK STTH802BY-TR www.st.com |
类似零件编号 - STTH802-Y |
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类似说明 - STTH802-Y |
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