STTH802-Y datasheet(2/7 Pages) STMICROELECTRONICS

2 / 7 page

Characteristics

STTH802-Y

2/7

Doc ID 018563 Rev 2

Characteristics

To evaluate the conduction losses use the following equation:

P = 0.73 x IF(AV) + 0.021 IF

(RMS)

Table 2.

Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

200

IF(RMS) Forward rms current

IF(AV)

Average forward current,

 = 0.5

Tc = 145 °C

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

100

Tstg

Storage temperature range

-65 to + 175

°C

Operating junction temperature range

-40 to + 175

°C

Table 3.

Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

3.2

°C/W

Table 4.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

µA

Tj = 125 °C

(2)

Forward voltage drop

Tj = 25 °C

IF = 8 A

0.95

1.05

Tj = 150 °C

0.8

0.90

Pulse test: tp = 5 ms,  < 2%

Pulse test: tp = 380 µs,  < 2%

Table 5.

Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery time

IF = 1 A, dIF/dt = -50 A/µs,

VR = 30 V, Tj = 25 °C

IF = 1 A, dIF/dt = -100 A/µs,

VR = 30 V, Tj = 25 °C

IRM

Reverse recovery current

IF = 8 A, dIF/dt = -200 A/µs,

VR = 160 V, Tj = 125 °C

5.5

tfr

Forward recovery time

IF = 8 A, dIF/dt = 50 A/µs

VFR = 1.1 x VFmax, Tj = 25 °C

150

VFP

Forward recovery voltage

IF = 8 A, dIF/dt = 50 A/µs,

Tj = 25 °C

1.5

STTH802-Y 数据表(PDF) 2 Page - STMicroelectronics

STTH802-Y 数据表(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7

数据表下载

链接网址

STTH802-Y 数据表(PDF) 2 Page - STMicroelectronics

STTH802-Y 数据表(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7

数据表 下载

链接网址

数据表下载