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STTH802-Y 数据表(PDF) 3 Page - STMicroelectronics

部件名 STTH802-Y
功能描述  Automotive ultrafast recovery diode
PDF  7 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH802-Y 数据表(HTML) 3 Page - STMicroelectronics

  STTH802-Y Datasheet HTML 1Page - STMicroelectronics STTH802-Y Datasheet HTML 2Page - STMicroelectronics STTH802-Y Datasheet HTML 3Page - STMicroelectronics STTH802-Y Datasheet HTML 4Page - STMicroelectronics STTH802-Y Datasheet HTML 5Page - STMicroelectronics STTH802-Y Datasheet HTML 6Page - STMicroelectronics STTH802-Y Datasheet HTML 7Page - STMicroelectronics  
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STTH802-Y
Characteristics
Doc ID 018563 Rev 2
3/7
Figure 1.
Peak current versus duty cycle
Figure 2.
Forward voltage drop versus
forward current (typical values)
Figure 3.
Forward voltage drop versus
forward current (maximum values)
Figure 4.
Relative variation of thermal
impedance, junction to case,
versus pulse duration
Figure 5.
Junction capacitanceversus
reverse applied voltage
(typical values)
Figure 6.
Reverse recovery charges versus
dIF/dt (typical values)
0
20
40
60
80
100
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
I
M(A)
T
d=tp/T
tp
I
M
T
δ=tp/T
tp
I
M
P = 2 W
P = 2 W
P = 1 W
P = 1 W
P = 5 W
P = 5 W
δ
0
20
40
60
80
100
120
140
160
180
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
FM(A)
T
j=25°C
T
j=150°C
VFM(V)
0
20
40
60
80
100
120
140
160
180
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
FM(A)
T
j=25°C
T
j=150°C
VFM(V)
0.1
1.0
1.E-03
1.E-02
1.E-01
1.E+00
Z
th(j-c)/Rth(j-c)
Single pulse
tp(s)
10
100
1
10
100
1000
C(pF)
F=1MHz
V
osc=30mVRMS
T
j=25°C
VR(V)
0
20
40
60
80
100
120
140
160
10
100
1000
Q
RR(nC)
I
F=8A
V
R=160V
T
j=125°C
T
j=25°C
dIF/dt(A/µs)



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