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STTH802-Y 数据表(PDF) 4 Page - STMicroelectronics |
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STTH802-Y 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 7 page ![]() Characteristics STTH802-Y 4/7 Doc ID 018563 Rev 2 Figure 7. Reverse recovery time versus dIF/dt (typical values) Figure 8. Peak reverse recovery current versus dIF/dt (typical values) 0 10 20 30 40 50 60 70 80 10 100 1000 t RR(ns) I F=8A V R=160V T j=125°C T j=25°C dIF/dt(A/µs) 0 2 4 6 8 10 12 10 100 1000 I RM(A) I F=8A V R=160V T j=125°C T j=25°C dIF/dt(A/µs) Figure 9. Dynamic parameters versus junction temperature Figure 10. Thermal resistance, junction to ambient, versus copper surface under tab 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 Q RR;IRM [Tj]/ QRR;IRM [Tj=125°C] I RM Q RR I F=8A V R=160V Tj(°C) 0 10 20 30 40 50 60 70 80 90 100 0 2 4 6 8 1012 1416 1820 S(cm²) Rth (°CW) (j-a) epoxy printed board copper thickness = 35 µm |
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