AMG-PI004

H-Bridge/Full Bridge Array of P and N channel MOSFETs

7. Absolute Maximum Ratings

The Absolute Maximum Ratings may not be exceeded under any circumstances.

#

Symbol

Parameter

N-CH

P-Ch

Unit

1

Drain-Source Voltage

60

-60

V

2

℃

5.1

-4.2

A

4.2

-3.5

A

3

Pulsed Drain Current²

15

-12

A

4

Gate-Source Voltage

± 20

± 20

V

5

2.2

2.2

W

6

Operating and Storage Temperature Range

-55 to 150

℃

Note(s): none

8. Electrical Characteristics

8.1. Thermal Data

#

Symbol

Parameter

Typ

Max

Unit

1

Thermal Resistance Junction-ambient ¹

-

328.15

K/W

2

Thermal Resistance Junction-Case¹

-

277.15

K/W

8.2. N-Channel Electrical Characteristics

#

Symbol

Parameter

Conditions

Min Typ

Max Unit

Off Characteristics

1

Drain-Source Breakdown

60

-

-

V

2

△BVDSS

/

BVDSS Temperature Coefficient Reference to 25

℃ ,

-

0,06

3

-

V/

℃

3

Drain-Source Leakage Current

℃

-

-

1

uA

℃

-

-

5

4

Gate-Source Leakage Current

-

-

±100 nA

On Characteristics

1

Gate Threshold Voltage

1,2

-

2,5

V

2

-

-5.24

-

mV/

℃

AMG-PI004

Revision: B

06.11.12

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