AMG-PI004

H-Bridge/Full Bridge Array of P and N channel MOSFETs

1. Functional Description of the AMG-PI004

The AMG-PI004 is built by utilizing one of the latest state-of-the-art trench technologies to

achieve ultra low resistance RDS(on) for the power MOSFETs. The complementary H-bridge

consists of 2 PMOS/NMOS transistor pairs. Based on this trench-technology the input gate

capacity is very low, so that high switching frequencies are possible thus making it ideal for

use in different applications. The DFN8 package is footprint compatible with the SOP8

package, making the H-bridge an ideal choice for wide spread off high efficiency applications

for motor driving, lighting, and power management.

2. Features



Supply voltage 5VDC...60VDC



Complementary N/P-MOS H-Bridge



60V/5.1A/ RDS(on) =34mΩ(typ)

-60V/-4.2A/ RDS(on) =54mΩ(typ)



Low QG of 9.86/12.6nC for PMOS/NMOS

Low CISS of 1447pF/1378pF for PMOS/NMOS



Low voltage gate drive VGS = ±20V



RoHS compliant and green product



Temperature Range -55C…+150C



DFN8L (5mm x 6mm x 0.75 mm)

3. Application

The AMG-PI004 is suitable for motor driving, lighting and power management.

AMG-PI004

Revision: B

06.11.12

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