AMG-PI004

H-Bridge/Full Bridge Array of P and N channel MOSFETs

8.3. P-Channel Electrical Characteristics

#

Symbol

Parameter

Conditions

Min

Typ

Max Unit

Off Characteristics

1

Drain-Source Breakdown

-60

-

-

V

2

/

BVDSS Temp. Coefficient

Reference to 25

℃ ,

-

-0.03

-

V/

℃

3

Drain-Source Leakage

Current

℃

-

-

1

uA

℃

-

-

5

4

Gate-Source Leakage

-

-

±100

nA

On Characteristics

1

Gate Threshold Voltage

-1.5

-

-3.0

V

2

VGS(th) Temp. Coefficient

-

4.56

-

mV/

℃

3

Static Drain-Source On-

Resistance²

-

60

80

MΩ

-

73

90

4

gfs

Forward Transconductance

-

15

-

S

Dynamic Characteristics

1

Input Capacitance

f=1MHz

-

1447

-

pF

2

Output Capacitance

-

97.3

-

3

Reverse Transfer

Capacitance

-

70

-

Switching Characteristics

1

Gate Resistance

-

21

42

Ω

2

Total Gate Charge (-4.5)

-

9.86

-

nC

3

Gate-Source Charge

-

3.08

-

4

Gate Charge

-

2.95

-

5

Turn-On Delay Time

-

28.8

-

ns

6

Rise Time

-

19.8

-

7

Turn-Off Delay Time

-

60.8

-

8

Fall Time

-

7.2

-

Drain- Diode Characteristics and Maximum Ratings

1

Force Current

-

-

-4.2

A

2

-

-

-10.5

A

3

Diode Forward Voltage²

℃

-

-

-1.2

V

Note(s):

1. The data tested by surface mounted on a 1 inch² FR-4 with 2OZ copper.

AMG-PI004

Revision: B

06.11.12

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