AMG-PI004 datasheet(6/20 Pages) ALPHA-MICRO

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AMG-PI004

H-Bridge/Full Bridge Array of P and N channel MOSFETs

Symbol

Parameter

Conditions

Min Typ

Max Unit

RDS(ON)

Static Drain-Source On-

Resistance²

VGS=10V , ID=5A

mΩ

VGS=4.5V , ID=4A

gfs

Forward Transconductance

VDS=5V , ID=4A

Dynamic Characteristics

Ciss

Input Capacitance

VDS=15V, VGS=0V,

f=1MHz

1378

Coss

Output Cap

Crss

Reverse Transfer Capacitance

Switching Characteristics

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

3.2

6.4

Total Gate Charge (4.5V)

VDS=48V, VGS=4.5V, ID=4A

12.6

Qgs

Gate-Source Charge

3.2

Qgd

Gate-Drain Charge

VDS=48V, VGS=4.5V, ID=4A

6.3

Td(on)

Turn-On Delay Time

VDD=30V , VGS=10V

RG=3.3Ω ID=4A

Rise Time

14.2

Td(off)

Turn-off Delay Time

24.4

Fall Time

4.6

Drain-Source Diode Characteristics and Maximum Ratings

Continuous Source Current1,4

VG=VD=0V , Force Current

5.1 A

ISM

Pulsed Source Current2,4

12 A

VSD

Diode Forward Voltage²

VGS=0V , IS=1A , TJ=25

℃

1.2 V

Note(s):

1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.

2. The data tested by pulsed, pulse width

≦ 300us , duty cycle ≦ 2%

3. The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V, L=0.1mH, IAS=22.6A

4. The power dissipation is limited by 150

℃ junction temperature.

5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power

dissipation.

AMG-PI004

Revision: B

06.11.12

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