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STM32F207IE 数据表(PDF) 77 Page - STMicroelectronics |
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STM32F207IE 数据表(HTML) 77 Page - STMicroelectronics |
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77 / 177 page ![]() STM32F20xxx Electrical characteristics Doc ID 15818 Rev 9 77/177 On-chip peripheral current consumption The current consumption of the on-chip peripherals is given in Table 24. The MCU is placed under the following conditions: Table 22. Typical and maximum current consumptions in Standby mode Symbol Parameter Conditions Typ Max(1) Unit TA = 25 °C TA = 85 °C TA = 105 °C VDD = 1.8 V VDD= 2.4 V VDD = 3.3 V VDD = 3.6 V IDD_STBY Supply current in Standby mode Backup SRAM ON, low-speed oscillator and RTC ON 3.0 3.4 4.0 15.1 25.8 µA Backup SRAM OFF, low- speed oscillator and RTC ON 2.4 2.7 3.3 12.4 20.5 Backup SRAM ON, RTC OFF 2.4 2.6 3.0 12.5 24.8 Backup SRAM OFF, RTC OFF 1.7 1.9 2.2 9.8 19.2 1. Based on characterization, not tested in production. Table 23. Typical and maximum current consumptions in VBAT mode Symbol Parameter Conditions Typ Max(1) Unit TA = 25 °C TA = 85 °C TA = 105 °C VDD = 1.8 V VDD= 2.4 V VDD = 3.3 V VDD = 3.6 V IDD_VBAT Backup domain supply current Backup SRAM ON, low-speed oscillator and RTC ON 1.29 1.42 1.68 12 19 µA Backup SRAM OFF, low-speed oscillator and RTC ON 0.62 0.73 0.96 8 10 Backup SRAM ON, RTC OFF 0.79 0.81 0.86 9 16 Backup SRAM OFF, RTC OFF 0.10 0.10 0.10 5 7 1. Based on characterization, not tested in production. |
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