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STM32F207IE 数据表(PDF) 86 Page - STMicroelectronics |
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STM32F207IE 数据表(HTML) 86 Page - STMicroelectronics |
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86 / 177 page ![]() Electrical characteristics STM32F20xxx 86/177 Doc ID 15818 Rev 9 Low-speed internal (LSI) RC oscillator Figure 33. ACCLSI versus temperature 5.3.10 PLL characteristics The parameters given in Table 32 and Table 33 are derived from tests performed under temperature and VDD supply voltage conditions summarized in Table 12. Table 31. LSI oscillator characteristics (1) 1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Min Typ Max Unit fLSI (2) 2. Based on characterization, not tested in production. Frequency 17 32 47 kHz tsu(LSI) (3) 3. Guaranteed by design, not tested in production. LSI oscillator startup time - 15 40 µs IDD(LSI) (3) LSI oscillator power consumption - 0.4 0.6 µA MS19013V1 -40 -30 -20 -10 0 10 20 30 40 50 -45 -35 -25 -15 -5 5 152535455565758595 105 Temperat ure (°C) max avg min Table 32. Main PLL characteristics Symbol Parameter Conditions Min Typ Max Unit fPLL_IN PLL input clock(1) 0.95 (2) 12.10(2) MHz fPLL_OUT PLL multiplier output clock 24 - 120 MHz fPLL48_OUT 48 MHz PLL multiplier output clock -- 48 MHz fVCO_OUT PLL VCO output 192 - 432 MHz |
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