MMDF2C02HD

4

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

N–Channel

P–Channel

TJ = 25°C

10 V

VGS = 4.5 V

TJ, JUNCTION TEMPERATURE (°C)

– 50

0

50

100

150

0.6

VGS = 10 V

ID = 2 A

1.4

1.0

– 25

25

75

125

0.8

1.6

1.2

0.04

ID, DRAIN CURRENT (AMPS)

0.20

0.08

0

1.0

2.0

3.0

4.0

0.16

0.12

0.5

1.5

2.5

3.5

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

0

2

4

10

0.6

0.4

6

8

0.2

0

0

1

2

3

4

10

0

0.2

0.4

0.6

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 3. On–Resistance versus

Gate–To–Source Voltage

ID = 1.5 A

TJ = 25°C

5

6

7

8

9

0

1

2

3

4

6

0.05

0.06

0.07

0.08

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

0.6

1

1.2

1.4

1.6

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

TJ = 25°C

VGS = 4.5 V

VGS = 10 V

ID = 1.5 A

5

10 V

– 50

– 25

0

25

50

75

100

125

150

0.8

0

ID, DRAIN CURRENT (AMPS)

Figure 3. On–Resistance versus

Gate–To–Source Voltage

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

Figure 5. On–Resistance Variation with

Temperature

ID = 1 A

TJ = 25°C