MMDF2C02HD

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Polarity

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

V(BR)DSS

—

20

—

—

Vdc

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

IDSS

(N)

(P)

—

—

—

—

1.0

1.0

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

—

—

—

100

nAdc

ON CHARACTERISTICS(2)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

VGS(th)

—

1.0

1.5

2.0

Vdc

Drain–to–Source On–Resistance

(VGS = 4.5 Vdc, ID = 1.5 Adc)

(VGS = 4.5 Vdc, ID = 1.0 Adc)

RDS(on)

(N)

(P)

—

—

0.074

0.152

0.100

0.180

Ohm

Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 3.0 Adc)

(VGS = 10 Vdc, ID = 2.0 Adc)

RDS(on)

(N)

(P)

—

—

0.058

0.118

0.090

0.160

Ohm

Forward Transconductance

(VDS = 3.0 Vdc, ID = 1.5 Adc)

(VDS = 3.0 Vdc, ID = 1.0 Adc)

gFS

(N)

(P)

2.0

2.0

3.88

3.0

—

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

(N)

(P)

—

—

455

420

630

588

pF

Output Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

(N)

(P)

—

—

184

290

250

406

Transfer Capacitance

Crss

(N)

(P)

—

—

45

116

90

232

SWITCHING CHARACTERISTICS(3)

Turn–On Delay Time

(VDD = 10 Vdc, ID = 3.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

td(on)

(N)

(P)

—

—

11

19

22

38

ns

Rise Time

(VDD = 10 Vdc, ID = 3.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

tr

(N)

(P)

—

—

58

66

116

132

Turn–Off Delay Time

(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

td(off)

(N)

(P)

—

—

17

25

35

50

Fall Time

VGS = 4.5 Vdc,

RG = 6.0 Ω)

tf

(N)

(P)

—

—

20

37

40

74

Turn–On Delay Time

(VDD = 10 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

td(on)

(N)

(P)

—

—

7.0

11

21

22

Rise Time

(VDD = 10 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

tr

(N)

(P)

—

—

32

21

64

42

Turn–Off Delay Time

(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

td(off)

(N)

(P)

—

—

27

45

54

90

Fall Time

VGS = 10 Vdc,

RG = 6.0 Ω)

tf

(N)

(P)

—

—

21

36

42

72

Total Gate Charge

(VDS = 16 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc)

(VDS = 16 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

QT

(N)

(P)

—

—

12.5

15

18

20

nC

Gate–Source Charge

(VDS = 16 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc)

Q1

(N)

(P)

—

—

1.3

1.2

—

—

Gate–Drain Charge

(VDS = 16 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

Q2

(N)

(P)

—

—

2.8

5.0

—

—

VGS = 10 Vdc)

Q3

(N)

(P)

—

—

2.4

4.0

—

—

(1) Negative signs for P–Channel device omitted for clarity.

(continued)

(2) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(3) Switching characteristics are independent of operating junction temperature.