MMDF2C02HD

3

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Polarity

Min

Typ

Max

Unit

SOURCE–DRAIN DIODE CHARACTERISTICS (TC = 25°C)

Forward Voltage(2)

(IS = 3.0 Adc, VGS = 0 Vdc)

(IS = 2.0 Adc, VGS = 0 Vdc)

VSD

(N)

(P)

—

—

0.79

1.5

1.3

2.1

Vdc

Reverse Recovery Time

(IS = 3.0 Adc, VAS = 0 Vdc,

dIS/dt = 100 A/µs)

(IS = 2.0 Adc, VAS = 0 Vdc,

dIS/dt = 100 A/µs)

trr

(N)

(P)

—

—

23

38

—

—

ns

(IS = 3.0 Adc, VAS = 0 Vdc,

dIS/dt = 100 A/µs)

ta

(N)

(P)

—

—

18

17

—

—

(IS = 2.0 Adc, VAS = 0 Vdc,

dIS/dt = 100 A/µs)

tb

(N)

(P)

—

—

5.0

21

—

—

Reverse Recovery Stored Charge

dIS/dt = 100 A/µs)

QRR

(N)

(P)

—

—

0.025

0.034

—

—

µC

(1) Negative signs for P–Channel device omitted for clarity.

(2) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

TYPICAL ELECTRICAL CHARACTERISTICS

N–Channel

P–Channel

3.9 V

VDS ≥ 10 V

100

°C

25

°C

TJ = – 55°C

0

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

1

2

4

3

1.0

1.5

2.0

3.5

2.5

3.0

0

2

4

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

3

1

Figure 1. On–Region Characteristics

1

1.4

1.8

3.4

0

2

4

6

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

VDS ≥ 10 V

TJ = 100°C

25

°C

– 55

°C

2.2

2.6

3

0

0.2

0.4

0.6

0.8

1.4

0

2

4

6

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

1

1.2

Figure 2. Transfer Characteristics

1.6

1.8

2

5

3

1

3.7 V

3.1 V

2.7 V

2.9 V

VGS = 10 V

3.3 V

3.5 V

2.5 V

4.5 V

TJ = 25°C

0

0.2

0.4

0.6

0.8

1.4

1

1.2

1.6

1.8

2

3.7 V

3.1 V

2.7 V

2.9 V

3.3 V

3.5 V

4.5 V

3.9 V

TJ = 25°C

2.5 V

VGS = 10 V