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STM32F107VC 数据表(PDF) 56 Page - STMicroelectronics |
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STM32F107VC 数据表(HTML) 56 Page - STMicroelectronics |
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56 / 103 page ![]() Electrical characteristics STM32F105xx, STM32F107xx 56/104 Doc ID 15274 Rev 6 All I/Os are CMOS and TTL compliant (no software configuration required). Their characteristics cover more than the strict CMOS-technology or TTL parameters. The coverage of these requirements is shown in Figure 18 and Figure 19 for standard I/Os, and in Figure 20 and Figure 21 for 5 V tolerant I/Os. Figure 18. Standard I/O input characteristics - CMOS port Vhys Standard IO Schmitt trigger voltage hysteresis(2) 200 mV IO FT Schmitt trigger voltage hysteresis(2) 5% VDD (3) mV Ilkg Input leakage current (4) VSS ≤ VIN ≤ VDD Standard I/Os ±1 µA VIN= 5 V, I/O FT 3 RPU Weak pull- up equivalent resistor(5) All pins except for PA10 VIN = VSS 30 40 50 k Ω PA10 8 11 15 RPD Weak pull- down equivalent resistor(5) All pins except for PA10 VIN = VDD 30 40 50 k Ω PA10 8 11 15 CIO I/O pin capacitance 5 pF 1. FT = Five-volt tolerant. In order to sustain a voltage higher than VDD+0.3 the internal pull-up/pull-down resistors must be disabled. 2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization, not tested in production. 3. With a minimum of 100 mV. 4. Leakage could be higher than max. if negative current is injected on adjacent pins. 5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This MOS/NMOS contribution to the series resistance is minimum (~10% order) . Table 36. I/O static characteristics Symbol Parameter Conditions Min Typ Max Unit |
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