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LED5000 数据表(PDF) 40 Page - STMicroelectronics

部件名 LED5000
功能描述  3 A monolithic step-down current source with dimming capability
PDF  52 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

LED5000 数据表(HTML) 40 Page - STMicroelectronics

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Application notes - alternative topologies
LED5000
40/51
Doc ID 023951 Rev 1
In case of open row, the positive output voltage tends to diverge, exceeding the D3
maximum reverse voltage and so the diode would be damaged. The overvoltage protection
limits VOUT and it protects the power components in case of load disconnection.
The network D4, R8 implements a level shifter to drive the gate of the transistor Q1. The
voltage at Q1 is:
Equation 64
Considering the VIN range 18 to 30 V:
Equation 65
the gate is driven inside the component specification. R8 can be dimensioned to discharge
the gate when VSW is low.
In case the input voltage range of the application is not suitable to implement a level shifter
to drive Q1, a dissipative clamping network (like R5, D6) must be used.
To design the compensation network for the positive buck-boost topology please refer to
paragraph
Chapter 6.4: Compensation network design for alternative topologies.
6.3
Floating boost
The floating boost topology (see
Figure 30) serves those applications with an input voltage
range narrower than the output voltage, that is the voltage drop across the LEDs and the
sensing resistor (i.e. VIN < VOUT). The topology is called floating since the output voltage is
referred to VIN and not GND, but this is typically suitable for a floating load like a string of
LEDs.
Figure 30.
Floating boost
The device is supplied by the output voltage so the maximum voltage drop across the LEDs
string is 48 V. The direct path of the boost conversion (COUT, VDIODE, L) guarantees the
proper startup when the input voltage is:
V
Q1 GATE
V
SW
V
DZ4
V
SW
15V
==
V
Q1 GATE MIN
V
SW
V
DZ4
18V
15V
3V
==
=
V
Q1 GATE MAX
V
SW
V
DZ4
30V
16V
15V
==
=
VREF
VCC
LX
GND
VIN
AM13514v1



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