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LCMXO2-256ZE-1SG32C 数据表(PDF) 48 Page - Lattice Semiconductor |
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LCMXO2-256ZE-1SG32C 数据表(HTML) 48 Page - Lattice Semiconductor |
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48 / 106 page ![]() 3-9 DC and Switching Characteristics MachXO2 Family Data Sheet sysIO Differential Electrical Characteristics The LVDS differential output buffers are available on the top side of MachXO2-640U, MachXO2-1200/U and higher density devices in the MachXO2 PLD family. LVDS Over Recommended Operating Conditions Parameter Symbol Parameter Description Test Conditions Min. Typ. Max. Units VINP, VINM Input Voltage VCCIO = 3.3 0 — 2.605 V VCCIO = 2.5 0 — 2.05 V VTHD Differential Input Threshold ±100 — mV VCM Input Common Mode Voltage VCCIO = 3.3V 0.05 — 2.6 V VCCIO = 2.5V 0.05 — 2.0 V IIN Input current Power on — — ±10 µA VOH Output high voltage for VOP or VOM RT = 100 Ohm — 1.375 — V VOL Output low voltage for VOP or VOM RT = 100 Ohm 0.90 1.025 — V VOD Output voltage differential (VOP - VOM), RT = 100 Ohm 250 350 450 mV V OD Change in VOD between high and low — — 50 mV VOS Output voltage offset (VOP - VOM)/2, RT = 100 Ohm 1.125 1.20 1.395 V V OS Change in VOS between H and L — — 50 mV IOSD Output short circuit current VOD = 0V driver outputs shorted — — 24 mA |
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