STM32L152C6 datasheet(77/121 Pages) STMICROELECTRONICS

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STM32L151x6/8/B, STM32L152x6/8/B

Electrical characteristics

Doc ID 17659 Rev 8

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6.3.10

Absolute maximum ratings (electrical sensitivity)

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test

conforms to the JESD22-A114/C101 standard.

Static latch-up

Two complementary static tests are required on six parts to assess the latch-up

performance:

●

A supply overvoltage is applied to each power supply pin

●

A current injection is applied to each input, output and configurable I/O pin

These tests are compliant with EIA/JESD 78A IC latch-up standard.

6.3.11

I/O current injection characteristics

As a general rule, current injection to the I/O pins, due to external voltage below VSS or

above VDD (for standard pins) should be avoided during normal product operation. However,

in order to give an indication of the robustness of the microcontroller in cases when

abnormal injection accidentally happens, susceptibility tests are performed on a sample

basis during device characterization.

Table 39.

ESD absolute maximum ratings

Symbol

Ratings

Conditions

Class Maximum value(1)

Based on characterization results, not tested in production.

Unit

VESD(HBM)

Electrostatic discharge

voltage (human body model)

TA = +25 °C, conforming

to JESD22-A114

22000

VESD(CDM)

Electrostatic discharge

voltage (charge device model)

TA = +25 °C, conforming

to JESD22-C101

500

Table 40.

Electrical sensitivities

Symbol

Parameter

Conditions

Class

Static latch-up class

TA = +105 °C conforming to JESD78A

II level A

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