M24C64-R datasheet(26/42 Pages) STMICROELECTRONICS

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DC and AC parameters

M24C64-W M24C64-R M24C64-F M24C64-DF

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Doc ID 16891 Rev 27

Table 13.

DC characteristics (M24C64-W, device grade 6)

Symbol

Parameter

Test conditions (see Table 6)Min.

Max.

Unit

ILI

Input leakage current

(SCL, SDA, E2, E1,

E0)

VIN = VSS or VCC

device in Standby mode

± 2

µA

ILO

Output leakage

current

SDA in Hi-Z, external voltage applied

on SDA: VSS or VCC

± 2

µA

ICC

Supply current (Read)

2.5 V < VCC < 5.5 V, fc = 400 kHz

(rise/fall time < 50 ns)

2mA

2.5 V < VCC < 5.5 V, fc = 1 MHz

(1)

(rise/fall time < 50 ns)

Only for devices identified with process letter K.

2.5

ICC0

Supply current (Write) During tW, 2.5 V < VCC < 5.5 V

5(2)

Characterized value, not tested in production.

ICC1

Standby supply

current

Device not selected(3), VIN = VSS or

VCC, VCC = 2.5 V

The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the

completion of the internal write cycle tW (tW is triggered by the correct decoding of a Write instruction).

2µA

Device not selected(3), VIN = VSS or

VCC, VCC = 5.5 V

5(4)

The new M24C64-W devices (identified by the process letter K) offer ICC1 = 3µA (max)

µA

VIL

Input low voltage

(SCL, SDA, WC)

–0.45

0.3 VCC

VIH

Input high voltage

(SCL, SDA)

0.7 VCC

6.5

Input high voltage

(WC, E2, E1, E0)

0.7 VCC VCC+0.6

VOL

Output low voltage

IOL = 2.1 mA, VCC = 2.5 V or

IOL = 3 mA, VCC = 5.5 V

0.4

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