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IO130PDB3V2 数据表(PDF) 17 Page - Microsemi Corporation

部件名 IO130PDB3V2
功能描述  Military ProASIC3/EL Low Power Flash FPGAs with Flash*Freeze Technology
PDF  212 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

IO130PDB3V2 数据表(HTML) 17 Page - Microsemi Corporation

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Military ProASIC3/EL Low Power Flash FPGAs
Revision 3
2-3
Note:
HTR time is the period during which you would not expect a verify failure due to flash cell leakage.
Figure 2-1 • High-Temperature Data Retention (HTR)
Table 2-3 •
Overshoot and Undershoot Limits1
VCCI and VMV
Average VCCI–GND Overshoot or Undershoot
Duration as a Percentage of Clock Cycle2
Maximum Overshoot/
Undershoot (125°C)2
2.7 V or less
10%
0.72 V
5%
0.82 V
3 V
10%
0.72 V
5%
0.82 V
3.3 V
10%
0.69 V
5%
0.79 V
3.6 V
10%
N/A
5%
N/A
Notes:
1. The duration is allowed at one out of six clock cycles. If the overshoot/undershoot occurs at one out of two cycles, the
maximum overshoot/undershoot has to be reduced by 0.15 V.
2. This table does not provide PCI overshoot/undershoot limits.
0
10
20
30
40
50
60
70
80
90
100
110
70
85
100 105 110 115 120 125 130 135 140 145 150
Temperature (ºC)
Tj (°C)
HTR
Lifetime
(yrs)
70
102.7
85
43.8
100
20.0
105
15.6
110
12.3
115
9.7
120
7.7
125
6.2
130
5.0
135
4.0
140
3.3
145
2.7
150
2.2



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