DSPIC30F2011AT-30ESLASHPF datasheet(56/228 Pages) MICROCHIP

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dsPIC30F6011/6012/6013/6014

DS70117F-page 54

6.6.3

LOADING WRITE LATCHES

Example 6-2 shows a sequence of instructions that can

be used to load the 96 bytes of write latches. 32

TBLWTL

and 32 TBLWTH instructions are needed to

load the write latches selected by the table pointer.

EXAMPLE 6-2:

LOADING WRITE LATCHES

6.6.4

INITIATING THE PROGRAMMING

SEQUENCE

For protection, the write initiate sequence for NVMKEY

must be used to allow any erase or program operation

to proceed. After the programming command has been

executed, the user must wait for the programming time

until programming is complete. The two instructions

following the start of the programming sequence

should be NOPs.

EXAMPLE 6-3:

INITIATING A PROGRAMMING SEQUENCE

; Set up a pointer to the first program memory location to be written

; program memory selected, and writes enabled

MOV

#0x0000,W0

;

MOV

W0,TBLPAG

; Initialize PM Page Boundary SFR

MOV

#0x6000,W0

; An example program memory address

; Perform the TBLWT instructions to write the latches

; 0th_program_word

MOV

#LOW_WORD_0,W2

;

MOV

#HIGH_BYTE_0,W3

;

TBLWTL

W2,[W0]

; Write PM low word into program latch

TBLWTH

W3,[W0++]

; Write PM high byte into program latch

; 1st_program_word

MOV

#LOW_WORD_1,W2

;

MOV

#HIGH_BYTE_1,W3

;

TBLWTL

W2,[W0]

; Write PM low word into program latch

TBLWTH

W3,[W0++]

; Write PM high byte into program latch

;

2nd_program_word

MOV

#LOW_WORD_2,W2

;

MOV

#HIGH_BYTE_2,W3

;

TBLWTL

W2, [W0]

; Write PM low word into program latch

TBLWTH

W3, [W0++]

; Write PM high byte into program latch

•

; 31st_program_word

MOV

#LOW_WORD_31,W2

;

MOV

#HIGH_BYTE_31,W3

;

TBLWTL

W2, [W0]

; Write PM low word into program latch

TBLWTH

W3, [W0++]

; Write PM high byte into program latch

Note: In Example 6-2, the contents of the upper byte of W3 has no effect.

DISI

; Block all interrupts with priority <7 for

; next 5 instructions

MOV

#0x55,W0

;

MOV

W0,NVMKEY

; Write the 0x55 key

MOV

#0xAA,W1

;

MOV

W1,NVMKEY

; Write the 0xAA key

BSET

NVMCON,#WR

; Start the erase sequence

NOP

; Insert two NOPs after the erase

NOP

; command is asserted

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