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AM29F040 数据表(PDF) 22 Page - Advanced Micro Devices

部件名 AM29F040
功能描述  4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
PDF  33 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29F040 数据表(HTML) 22 Page - Advanced Micro Devices

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Am29F040
AC CHARACTERISTICS
Write/Erase/Program Operations
Notes:
1. This does not include the preprogramming time.
2. Not 100% tested.
Parameter Symbols
Description
Speed Options
Unit
JEDEC
Standard
-55
-70
-90
-120
-150
tAVAV
tWC
Write Cycle Time (Note 2)
Min
55
70
90
120
150
ns
tAVWL
tAS
Address Setup Time
Min
00000
ns
tWLAX
tAH
Address Hold Time
Min
40
45
45
50
50
ns
tDVWH
tDS
Data Setup Time
Min
25
30
45
50
50
ns
tWHDX
tDH
Data Hold Time
Min
00000
ns
tOES
Output Enable Setup Time
Min
00000
ns
tOEH
Output
Enable
Hold
Time
Read (Note 2)
Min
00000
ns
Toggle and Data Polling
(Note 2)
Min
10
10
10
10
10
ns
tGHWL
tGHWL
Read Recover Time Before Write
Min
00000
ns
tELWL
tCS
CE Setup Time
Min
00000
ns
tWHEH
tCH
CE Hold Time
Min
00000
ns
tWLWH
tWP
Write Pulse Width
Min
30
35
45
50
50
ns
tWHWL
tWPH
Write Pulse Width High
Min
20
20
20
20
20
ns
tWHWH1
tWHWH1
Byte Programming Operation
Typ
77777
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 1)
Typ
11111
sec
Max
88888
sec
tWHWH3
tWHWH3
Chip Erase Operation (Note 1)
Typ
88888
sec
Max
64
64
64
64
64
sec
tVCS
VCC Setup Time (Note 2)
Min
50
50
50
50
50
µs



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