AM29F040 datasheet(2/33 Pages) AMD

2 / 33 page

Am29F040

Any individual sector is typically erased and veriﬁed in

1.0 seconds (if already completely preprogrammed).

This device also features a sector erase architecture.

The sector mode allows for 64K byte blocks of memory

to be erased and reprogrammed without affecting

other blocks. The Am29F040 is erased when shipped

from the factory.

The device features single 5.0 V power supply opera-

tion for both read and write functions. Internally gener-

ated and regulated voltages are provided for the

program and erase operations. A low VCC detector

automatically inhibits write operations on the loss of

power. The end of program or erase is detected by Data

Polling of DQ7 or by the Toggle Bit feature on DQ6.

Once the end of a program or erase cycle has been

completed, the device internally resets to the read

mode.

AMD’s Flash technology combines years of EPROM

and E2PROM experience to produce the highest levels

of quality, reliability and cost effectiveness. The

Am29F040 memory electrically erases the entire chip

or all bits within a sector simultaneously via Fowler-

Nordheim tunneling. The bytes are programmed one

byte at a time using the EPROM programming

mechanism of hot electron injection.

Flexible Sector-Erase Architecture

s Eight 64 Kbyte sectors

s Individual-sector, multiple-sector, or bulk-erase

capability

s Individual or multiple-sector protection is user

deﬁnable

7FFFFh

6FFFFh

5FFFFh

64 Kbytes per Sector

4FFFFh

3FFFFh

2FFFFh

1FFFFh

0FFFFh

00000h

17113E-1

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